H10W 20/049
By diffusing alloying elements
Official title: {by diffusing alloying elements}
H10W20/049 (By diffusing alloying elements) appears on 511 US grants and 451 published applications in this corpus.
Search patents in H10W- Granted patents
- 511
- Published applications
- 451
- Assignees
- 112
- Inventors
- 826
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 6 | 0 |
| 1995 | 2 | 0 |
| 1996 | 6 | 0 |
| 1997 | 7 | 0 |
| 1998 | 6 | 0 |
| 1999 | 9 | 0 |
| 2000 | 23 | 0 |
| 2001 | 26 | 8 |
| 2002 | 22 | 18 |
| 2003 | 27 | 8 |
| 2004 | 19 | 23 |
| 2005 | 15 | 11 |
| 2006 | 10 | 19 |
| 2007 | 9 | 15 |
| 2008 | 11 | 12 |
| 2009 | 8 | 9 |
| 2010 | 14 | 19 |
| 2011 | 14 | 13 |
| 2012 | 11 | 14 |
| 2013 | 17 | 11 |
| 2014 | 16 | 22 |
| 2015 | 13 | 15 |
| 2016 | 16 | 19 |
| 2017 | 29 | 20 |
| 2018 | 32 | 46 |
| 2019 | 35 | 21 |
| 2020 | 18 | 22 |
| 2021 | 17 | 21 |
| 2022 | 12 | 23 |
| 2023 | 12 | 24 |
| 2024 | 18 | 18 |
| 2025 | 16 | 11 |
| 2026 | 12 | 9 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Metal interconnect structure and method for fabricating the same15 Sep 2026US 12,740,384 B2United Microelectronics Corp.
- Contact for electronic component14 Jul 2026US 12,685,104 B2STMicroelectronics (Rousset) SAS
- Method of forming copper interconnect structure with manganese barrier layer14 Jul 2026US 12,685,112 B2Adeia Semiconductor Solutions LLC
- Semiconductor device26 May 2026US 12,642,073 B2Samsung Electronics Co., Ltd.
- Semiconductor device including conductive structure and method for manufacturing the same7 Apr 2026US 12,598,984 B2Samsung Electronics Co., Ltd.
- Contact for electronic component1 Oct 2026US 2026/0305281 A1STMicroelectronics (Rousset) SAS
- Semiconductor structure and manufacturing method thereof13 Aug 2026US 2026/0239942 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Interconnect structure including vertical conductors and method for manufacturing the same30 Jul 2026US 2026/0223664 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Doped conductive features of an interconnect structure and methods of manufacturing the same18 Jun 2026US 2026/0173837 A1
- Interconnect structure, electronic device including the same, and electronic apparatus including the same18 Jun 2026US 2026/0173855 A1Ajou University Industry-Academic Cooperation Foundation
Most cited
By later US patents
- Protected encapsulation of catalytic layer for electroless copper interconnect457US 5,824,599 ACornell Research Foundation, Inc. · 1998
- Method for forming Co-W-P-Au films259US 6,323,128 B1International Business Machines Corporation · 2001
- Aluminum-palladium alloy for initiation of electroless plating257US 5,907,790 AAstarix Inc. · 1999
- Sub-quarter-micron copper interconnections with improved electromigration resistance and reduced defect sensitivity141US 6,069,068 AInternational Business Machines Corporation · 2000
- Semiconductor device having multilayer interconnection structure132US 5,202,579 AMitsubishi Denki Kabushiki Kaisha · 1993