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US 12,598,984 B2Granted
Semiconductor device including conductive structure and method for manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJungha Hwang, Dongchan Lim, Seulgi Bae
Life of this patent
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Abstract
A semiconductor device including an insulating structure, and a conductive structure in the insulating structure may be provided. The conductive structure includes a barrier layer, an anti-migration layer on the barrier layer, a liner on the anti-migration layer, a conductive layer on the liner, and a capping layer covering a top surface of the barrier layer and a top surface of the anti-migration layer. The capping layer and the liner include Co. The anti-migration layer includes Mn.
Claims18
A semiconductor device comprising:
- an insulating structure;
- and
- a conductive structure in the insulating structure,
- wherein the conductive structure comprises,
- a barrier layer,
- an anti-migration layer on the barrier layer,
- a liner on the anti-migration layer,
- a conductive layer on the liner, and
- a capping layer covering a top surface of the barrier layer and a top surface of the anti-migration layer,
- wherein the capping layer and the liner comprise Co, and wherein the anti-migration layer comprises Mn;
- wherein an upper portion of the anti-migration layer is between the capping layer and the liner.
8 more elements
A semiconductor device comprising:
- an insulating structure;
- and a conductive structure in the insulating structure,
- wherein the conductive structure comprises,
- a conductive layer,
- a liner covering an outer sidewall of the conductive layer,
- an anti-migration layer covering an outer sidewall of the liner,
- a barrier layer covering an outer sidewall of the anti-migration layer, and
- a capping layer covering a top surface of the anti-migration layer and a top surface of the barrier layer,
- wherein an upper portion of the anti-migration layer comprises a bottom surface contacting a top surface of the liner.
6 more elements
A semiconductor device comprising:
- an insulating structure;
- and
- a conductive structure in the insulating structure,
- wherein the conductive structure comprises,
- a barrier layer,
- an anti-migration layer on the barrier layer,
- a liner on the anti-migration layer,
- a conductive layer on the liner, and
- a capping layer covering a top surface of the barrier layer and a top surface of the anti-migration layer,
- wherein a first sidewall of the capping layer is connected to a first outer sidewall of the barrier layer,
- wherein a second side wall of the capping layer is connected to a second outer sidewall of the barrier layer,
- wherein the liner is spaced apart from the capping layer, and
- wherein the liner and the capping layer comprise Co.
10 more elements
Dependencies are inferred from the claim text.