Contact for electronic component

A method of manufacturing a contact on a semiconductor region of an electronic component, comprising:

• forming a stack of layers that are electrically conductive on lateral walls and at a bottom of an orifice crossing a dielectric region of the electronic component along a longitudinal direction;
• wherein the bottom of the orifice is aligned with the semiconductor region;
• wherein forming the stack of layers is carried out from a first surface of said dielectric region and comprises:
• forming a polysilicon layer and a layer of a first metal in contact with the polysilicon layer, said first metal being selected from the group of transition metals suitable for forming with the polysilicon a metal silicide;
• and
• then performing a thermal anneal to cause the first metal to react with the polysilicon layer to form a layer of metal silicide;
• wherein the layer of metal silicide includes at least a portion extending in the longitudinal direction of the orifice;
• and
• wherein the layer of the first metal is formed before the polysilicon layer on lateral walls and at the bottom of the orifice.