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US 12,694,277 B2Granted
Synaptic mechanotransistors
AssigneeIucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
InventorsDo Hwan Kim, Yoon Sun Chung, Joo Sung Kim, Hyuk Min Kweon
Life of this patent
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Abstract
A synaptic mechanotransistor includes an ionic active layer configured to form a channel through which migration of ions is provided. The synaptic mechanotransistor is capable of implementing a mechanical stimulus, a change in resistance of a sensor device, conversion into an electrical pulse signal, and securement of synaptic characteristics in a single device.
Claims8
A synaptic mechanotransistor, comprising:
- a substrate;
- a source electrode and a drain electrode formed on the substrate;
- a semiconductor channel layer formed on the substrate and configured to be in electrical contact with the source electrode and the drain electrode;
- an ionic active layer formed on the semiconductor channel layer;
- and
- a gate electrode formed on the ionic active layer,
- wherein the ionic active layer comprises a polymer resin, hydrogen-bonded particles, and an ionic liquid,
- wherein the polymer resin comprises at least one selected from the group consisting of a thermoplastic polyurethane (TPU) or polydimethylsiloxane (PDMS), polyisoprene, polybutadiene and polyisobutylene,
- wherein mobile ions in the ionic liquid are physically constrained on the surfaces of the hydrogen-bonded particles by hydrogen bonding in the absence of any external mechanical stimulus,
- wherein migration of the mobile ions does not occur due to formation of an electric field alone;
- and
- wherein an ion migration pathway in the ionic active layer is formed only when the hydrogen bonding is broken by the external mechanical stimulus to thereby enable migration of the mobile ions.
9 more elements
Dependencies are inferred from the claim text.