Methods of fabricating copper interconnects for integrated circuits

A method of fabricating an interconnect for an integrated circuit comprising the steps of:

• forming a dielectric layer on an integrated circuit substrate, the dielectric layer including a contact hole that exposes a portion of the integrated circuit substrate;
• forming a diffusion barrier film on the dielectric layer opposite the integrated circuit substrate and on the exposed portion of the integrated circuit substrate;
• amorphizing the diffusion barrier film to create an amorphous diffusion barrier film by implanting ions selected from the group consisting of boron, nitrogen and silicon into the diffusion barrier film;
• and
• forming a copper film on the amorphous diffusion barrier film.

A method of fabricating an interconnect for an integrated circuit comprising the steps of:

• forming a dielectric layer on an integrated circuit substrate, the dielectric layer including a contact hole that exposes an underlying conductor;
• forming a diffusion barrier film on the dielectric layer opposite the underlying conductor and on the exposed portion of the underlying conductor;
• amorphizing the diffusion barrier film to create an amorphous diffusion barrier film by implanting ions selected from the group consisting of boron, nitrogen and silicon into the diffusion barrier film;
• and
• forming a copper film on the amorphous diffusion barrier film.