Integrated circuit device and method of manufacturing

An integrated circuit (IC) device, comprising:

• a substrate having a front side, and a back side opposite the front side along a thickness direction of the substrate;
• a first diode and a second diode on the front side of the substrate;
• an input/output (I/O) pad electrically coupled to a cathode of the first diode and an anode of the second diode, wherein the I/O pad is on the back side of the substrate;
• a first back side via extending from the back side, through the substrate, to the front side, and in electrical contact with one of an anode or the cathode of the first diode;
• and
• a second back side via extending from the back side, through the substrate, to the front side, and in electrical contact with one of the anode or a cathode of the second diode.

A method, comprising:

• implanting dopants of a first dopant type into an active region over a front side of a substrate to form a first doped region;
• implanting dopants of a second dopant type different from the first dopant type into the active region to form a second doped region;
• depositing and patterning a front side redistribution structure over the first doped region and the second doped region, the front side redistribution structure comprising a front side conductive structure electrically coupled to the second doped region;
• from a back side of the substrate, etching an opening to expose the first doped region and filling a first conductive material into the opening to obtain a back side via;
• and
• depositing and patterning a back side redistribution structure over the back side via, the back side redistribution structure comprising:
• a first conductor electrically coupled to the back side via, and
• a second conductor electrically coupled to the front side conductive structure.