Method of forming wiring structure for semiconductor device

A method for manufacturing a semiconductor device having a wiring structure, comprising the steps of:

• providing a semiconductor substrate having a surface;
• forming a film of a conductive material over the surface of the semiconductor substrate, the conductive material comprising one of a high melting point metal, a high melting point metal alloy, and a high melting point metal silicide and having grains and grain boundaries;
• forming an anti-diffusion film in at least a portion of the film of the conductive material, the anti-diffusion film comprising a grain-boundary-nitrided layer of the conductive material, wherein only the grain boundaries between the grains of the conductive material are substantially nitrided;
• and
• forming a metal wiring on at least a portion of a surface of the anti-diffusion film.

A method of forming a wiring structure for use in a semiconductor device, comprising the steps of:

• providing a semiconductor substrate having a surface;
• forming a conductive material film comprising a high melting point metal over the surface of the semiconductor substrate, the conductive material film having grains and grain boundaries between the grains;
• and
• forming a grain-boundary-nitrided layer in at least a portion of the conductive material film, wherein only the grain boundaries of the conductive material film in the grain-boundary-nitrided layer are substantially nitrided.

A method of forming a wiring structure for use in a semiconductor device, comprising:

• providing a semiconductor substrate having a surface;
• forming a conductive material film comprising a high melting point metal over the surface of the semiconductor substrate, the conductive material film has grains and grain boundaries between the grains;
• and
• nitriding at least a portion of the conductive material film by heating in a reduced pressure nitriding ambient.

A method of forming a wiring structure for use in a semiconductor device, comprising:

• providing a semiconductor substrate having a surface;
• forming a high melting point metal silicide film over the surface of the semiconductor substrate;
• and
• nitriding at least a portion of the silicide film by heating in a reduced pressure nitriding ambient.

A method of forming a wiring structure for use in a semiconductor device, comprising:

• providing a semiconductor substrate having a surface;
• forming a conductive material film comprising a high melting point metal over the surface of the semiconductor substrate;
• and
• heating at least a portion of the conductive material film to at least 700.degree. C. in a reduced pressure nitriding ambient.

A method of forming a wiring structure for use in a semiconductor device, comprising:

• providing a semiconductor substrate having a surface;
• forming a high melting point metal silicide film over the surface of the semiconductor substrate;
• and
• heating at least a portion of the silicide film to at least 700.degree. C. in a reduced pressure nitriding ambient.