Doping barrier layer to facilitate metal fill with large grain size
AssigneeWinbond Electronics Corp.
InventorsPing-Lung Yu, Po-Chun Shao, Chu-Chun Hsieh
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Abstract
A method for forming a semiconductor structure includes providing a substrate with an opening in or on the substrate. The method further includes conformally forming a barrier layer in the opening and on the substrate and performing an implantation process to implant a dopant into the barrier layer. The method further includes conformally forming a capping layer on the barrier layer and performing an annealing process, such that the dopant diffuses into the grain boundary of the barrier layer. The method further includes removing the capping layer and filling the opening with a conductive material.
Claims15
A method of forming a semiconductor structure, comprising:
- providing a substrate with an opening in or on the substrate;
- conformally forming a barrier layer in the opening and on the substrate;
- performing an implantation process to implant a dopant into the barrier layer;
- conformally forming a capping layer on the barrier layer;
- performing an annealing process, such that the dopant diffuses into a grain boundary of the barrier layer, wherein the capping layer is present during the annealing process;
- entirely removing the capping layer;
- and
- then filling the opening with a conductive material.
A method of forming a semiconductor structure, comprising:
- providing a substrate with an opening in or on the substrate;
- conformally forming a barrier layer in the opening and on the substrate;
- forming a capping layer on the barrier layer, wherein a thickness of the capping layer above a bottom surface of the opening is less than a thickness of the capping layer above a top surface of the substrate;
- performing an implantation process to implant a dopant through the capping layer and into the barrier layer;
- performing an annealing process, such that the dopant diffuses into a grain boundary of the barrier layer, wherein the capping layer is present during the annealing process;
- entirely removing the capping layer;
- and
- then filling the opening with a conductive material.
Dependencies are inferred from the claim text.