H10P 95/064
The removal being chemical etching
Official title: {the removal being chemical etching}
H10P95/064 (The removal being chemical etching) appears on 1,063 US grants and 928 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,063
- Published applications
- 928
- Assignees
- 265
- Inventors
- 2,035
- Latest grant
- 18 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 4 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 6 | 0 |
| 1984 | 4 | 0 |
| 1985 | 6 | 0 |
| 1986 | 4 | 0 |
| 1987 | 13 | 0 |
| 1988 | 6 | 0 |
| 1989 | 5 | 0 |
| 1990 | 7 | 0 |
| 1991 | 7 | 0 |
| 1992 | 4 | 0 |
| 1993 | 13 | 0 |
| 1994 | 11 | 0 |
| 1995 | 10 | 0 |
| 1996 | 6 | 0 |
| 1997 | 6 | 0 |
| 1998 | 12 | 0 |
| 1999 | 23 | 0 |
| 2000 | 30 | 0 |
| 2001 | 22 | 10 |
| 2002 | 28 | 15 |
| 2003 | 22 | 21 |
| 2004 | 18 | 19 |
| 2005 | 12 | 7 |
| 2006 | 11 | 13 |
| 2007 | 12 | 17 |
| 2008 | 10 | 12 |
| 2009 | 7 | 7 |
| 2010 | 7 | 13 |
| 2011 | 13 | 9 |
| 2012 | 8 | 15 |
| 2013 | 13 | 28 |
| 2014 | 27 | 33 |
| 2015 | 49 | 110 |
| 2016 | 92 | 96 |
| 2017 | 96 | 106 |
| 2018 | 74 | 70 |
| 2019 | 77 | 68 |
| 2020 | 85 | 78 |
| 2021 | 57 | 56 |
| 2022 | 35 | 36 |
| 2023 | 33 | 30 |
| 2024 | 34 | 30 |
| 2025 | 28 | 18 |
| 2026 | 11 | 11 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor devices and method of manufacturing the same18 Aug 2026US 12,713,886 B2Samsung Electronics Co., Ltd.
- Graphene device and method of fabricating a graphene device28 Jul 2026US 12,696,467 B2Graphenea Semiconductor SLU
- High-k isolation of fin structures16 Jun 2026US 12,660,533 B2Taiwan Semiconductor Manufacturing Company.Ltd
- High aspect ratio carbon layer etch with improved throughput and process window19 May 2026US 12,635,431 B2Tokyo Electron Limited
- Semiconductor structure, test structure, manufacturing method and test method21 Apr 2026US 12,610,811 B2Changxin Memory Technologies, Inc.
- High-k isolation of fin structures24 Sep 2026US 2026/0293548 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Contact formation method and related structure13 Aug 2026US 2026/0239947 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Processes for planarization of a semiconducting wafer substrate23 Jul 2026US 2026/0215235 A1
- Method for manufacturing an electro-optical device and electro-optical device21 May 2026US 2026/0140406 A1Black Semiconductor GmbH
- Processing method and semiconductor device manufacturing method14 May 2026US 2026/0136854 A1Canon Kabushiki Kaisha
Most cited
By later US patents
- Vertical gate all around (VGAA) transistors and methods of forming the same1,029US 9,502,265 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Interlayer dielectric with a composite dielectric stack530US 6,437,444 B2Intel Corporation · 2002
- Process for producing the field oxide of an integrated circuit477US 4,455,193 ACommissariat A L' Energie Atomique · 1984
- Film forming method, computer storage medium, and film forming system471US 9,741,559 B2Tokyo Electron Limited · 2017
- Multistep planarized chemical vapor deposition process with the use of low melting inorganic material for flowing while depositing438US 4,962,063 AAPPLIED Materials.Inc. · 1990