Process for producing the field oxide of an integrated circuit

Abstract

Process for producing the field oxide of an integrated circuit, wherein it comprises the following successive stages: (a) producing a resin mask on a first region of a doped semiconductor substrate, in which will be formed the active component of the integrated circuit, (b) production of a first etching over a height h of a second region of the doped semiconductor substrate, in which it is wished to produce the field oxide, (c) implantation of ions in the second region of the remaining substrate, giving a doping of the same type as that of the substrate, (d) deposition of an insulating layer on the complete substrate, (e) deposition of a resin layer on the insulating layer, (f) production of a second simultaneous etching of the resin layer and the insulating layer, until the complete elimination of that region of the oxide layer positioned above the first region of the substrate in which will be produced the active component of the integrated circuit.

Dependencies are inferred from the claim text.