H10P 95/06
Planarisation of inorganic insulating materials
Official title: {Planarisation of inorganic insulating materials}
H10P95/06 (Planarisation of inorganic insulating materials) appears on 4,640 US grants and 4,440 published applications in this corpus.
Search patents in H10P- Granted patents
- 4,640
- Published applications
- 4,440
- Assignees
- 684
- Inventors
- 7,255
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 4 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 6 | 0 |
| 1984 | 4 | 0 |
| 1985 | 11 | 0 |
| 1986 | 5 | 0 |
| 1987 | 15 | 0 |
| 1988 | 8 | 0 |
| 1989 | 9 | 0 |
| 1990 | 9 | 0 |
| 1991 | 12 | 0 |
| 1992 | 13 | 0 |
| 1993 | 28 | 0 |
| 1994 | 44 | 0 |
| 1995 | 38 | 0 |
| 1996 | 34 | 0 |
| 1997 | 60 | 0 |
| 1998 | 82 | 0 |
| 1999 | 139 | 0 |
| 2000 | 161 | 0 |
| 2001 | 180 | 75 |
| 2002 | 181 | 155 |
| 2003 | 163 | 158 |
| 2004 | 131 | 132 |
| 2005 | 87 | 121 |
| 2006 | 108 | 138 |
| 2007 | 81 | 119 |
| 2008 | 67 | 112 |
| 2009 | 46 | 81 |
| 2010 | 69 | 73 |
| 2011 | 55 | 74 |
| 2012 | 59 | 94 |
| 2013 | 84 | 99 |
| 2014 | 82 | 106 |
| 2015 | 133 | 274 |
| 2016 | 261 | 272 |
| 2017 | 285 | 317 |
| 2018 | 276 | 255 |
| 2019 | 282 | 343 |
| 2020 | 344 | 394 |
| 2021 | 269 | 247 |
| 2022 | 174 | 186 |
| 2023 | 161 | 190 |
| 2024 | 139 | 147 |
| 2025 | 161 | 185 |
| 2026 | 74 | 93 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Chemical mechanical planarization polishing for shallow trench isolation29 Sep 2026US 12,751,256 B2Versum Materials US, LLC
- Polishing composition for semiconductor process and method for polishing a substrate using the same22 Sep 2026US 12,742,096 B2Ycchem Co., Ltd.
- Method of gap filling for semiconductor device15 Sep 2026US 12,740,083 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Replacement gate process for semiconductor devices1 Sep 2026US 12,727,410 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method of manufacturing the same1 Sep 2026US 12,727,452 B2Nanya Technology Corporation
- Method of forming semiconductor device8 Oct 2026US 2026/0314034 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Multi-function etching sacrificial layers to protect three-dimensional dummy fins in semiconductor devices8 Oct 2026US 2026/0314347 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Aluminum Nitride Bonding1 Oct 2026US 2026/0305273 A1APPLIED Materials.Inc.
- Warpage reset layer on land side of substrate1 Oct 2026US 2026/0305418 A1Intel Corporation
- High density capacitor implemented using finfet24 Sep 2026US 2026/0293169 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Vertical gate all around (VGAA) transistors and methods of forming the same1,029US 9,502,265 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound663US 6,413,583 B1APPLIED Materials.Inc. · 2002
- Method and apparatus for depositing a planarized passivation layer577US 5,908,672 AAPPLIED Materials.Inc. · 1999
- Interlayer dielectric with a composite dielectric stack530US 6,437,444 B2Intel Corporation · 2002
- Process for producing the field oxide of an integrated circuit477US 4,455,193 ACommissariat A L' Energie Atomique · 1984