Chemical mechanical planarization polishing for shallow trench isolation

Abstract

The present invention discloses Shallow Trench Isolation (STI) Chemical Mechanical Planarization (CMP) polishing compositions, methods and systems that offer high and tunable Oxide: SiN and Oxide: Poly-Si removal selectivity, and low oxide trench dishing at different pH conditions in addition to suppressed Poly-Si removal rates. The polishing compositions comprise abrasive particles such as calcined ceria, and at least two preferably at least three chemical additives. The additives are (1) chemicals such as D-mannose, L-mannose, ribitol (D-ribitol), xylitol, meso-erythritol, D-sorbitol, mannitol, dulcitol, iditol, maltitol, fructose, sorbitan, sucrose, D-ribose, inositol, and glucose; (2) polyacrylic acid or polyacrylate and its ammonium, potassium or sodium salt, and (3) polyethylene glycol (PEG) with different molecular weight distributions as film selectivity tuning and oxide trench dishing reducing additives.

Dependencies are inferred from the claim text.