Method and apparatus for depositing a planarized passivation layer

A process for depositing a passivation layer over a plurality of raised features forming gaps therebetween on a substrate disposed in a processing chamber, said process comprising:

• a) during a first deposition stage,
• i) flowing a first process gas into the processing chamber, said first process gas comprising a first silicon-containing source, an oxygen-containing source, and a fluorine-containing source,
• ii) striking a first plasma from said first process gas,
• iii) maintaining said first plasma such that a fluorine-doped silicon oxide layer is deposited at a deposition rate of less than about 4500 .ANG./min, and
• b) during a second deposition stage subsequent to said first deposition stage,
• i) flowing a second process gas into the processing chamber, said second process gas comprising a second silicon-containing source gas and a nitrogen-containing source gas,
• ii) striking a second plasma from said second process gas, and
• iii) maintaining said second plasma to deposit a silicon nitride layer over said fluorine-doped silicon oxide layer, wherein
• said fluorine-doped silicon oxide layer and said silicon nitride layer form a passivation layer, and
• said deposition rate inhibits formation of voids in said silicon nitride layer by maintaining a positive sidewall slope in said fluorine-doped silicon oxide layer in an area between or above said gaps.

A process for depositing a passivation layer over a plurality of raised features forming gaps therebetween on a substrate disposed in a processing chamber, said process comprising:

• depositing a first layer of said passivation layer over the substrate using a process gas comprising silicon, oxygen, and a halogen element, said first layer being deposited at a deposition rate of less than about 4500 .ANG./min and more than about 3000 .ANG./min, wherein said deposition rate inhibits formation of voids in said first layer;
• and
• depositing a second layer of said passivation layer over said first layer, wherein
• said second layer is exposed to and protects said first layer from an ambient environment and
• said deposition rate inhibits formation of voids in said second layer by maintaining a positive sidewall slope in said first layer in an area between or above said gaps.