H10P 95/062
Involving a dielectric removal step
Official title: {involving a dielectric removal step}
H10P95/062 (Involving a dielectric removal step) appears on 3,962 US grants and 3,889 published applications in this corpus.
Search patents in H10P- Granted patents
- 3,962
- Published applications
- 3,889
- Assignees
- 621
- Inventors
- 6,474
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 4 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 6 | 0 |
| 1984 | 4 | 0 |
| 1985 | 6 | 0 |
| 1986 | 5 | 0 |
| 1987 | 15 | 0 |
| 1988 | 7 | 0 |
| 1989 | 6 | 0 |
| 1990 | 9 | 0 |
| 1991 | 11 | 0 |
| 1992 | 11 | 0 |
| 1993 | 22 | 0 |
| 1994 | 30 | 0 |
| 1995 | 30 | 0 |
| 1996 | 26 | 0 |
| 1997 | 44 | 0 |
| 1998 | 70 | 0 |
| 1999 | 110 | 0 |
| 2000 | 143 | 0 |
| 2001 | 146 | 67 |
| 2002 | 167 | 141 |
| 2003 | 144 | 138 |
| 2004 | 113 | 120 |
| 2005 | 79 | 114 |
| 2006 | 102 | 129 |
| 2007 | 73 | 111 |
| 2008 | 63 | 107 |
| 2009 | 43 | 78 |
| 2010 | 64 | 69 |
| 2011 | 50 | 72 |
| 2012 | 56 | 89 |
| 2013 | 82 | 94 |
| 2014 | 78 | 95 |
| 2015 | 114 | 236 |
| 2016 | 211 | 212 |
| 2017 | 209 | 232 |
| 2018 | 202 | 196 |
| 2019 | 234 | 295 |
| 2020 | 298 | 354 |
| 2021 | 231 | 233 |
| 2022 | 158 | 168 |
| 2023 | 147 | 170 |
| 2024 | 126 | 129 |
| 2025 | 144 | 161 |
| 2026 | 64 | 79 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Chemical mechanical planarization polishing for shallow trench isolation29 Sep 2026US 12,751,256 B2Versum Materials US, LLC
- Polishing composition for semiconductor process and method for polishing a substrate using the same22 Sep 2026US 12,742,096 B2Ycchem Co., Ltd.
- Method of gap filling for semiconductor device15 Sep 2026US 12,740,083 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Replacement gate process for semiconductor devices1 Sep 2026US 12,727,410 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Polishing liquid and polishing method18 Aug 2026US 12,709,699 B2Resonac Corporation
- Multi-function etching sacrificial layers to protect three-dimensional dummy fins in semiconductor devices8 Oct 2026US 2026/0314347 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Aluminum Nitride Bonding1 Oct 2026US 2026/0305273 A1APPLIED Materials.Inc.
- High density capacitor implemented using finfet24 Sep 2026US 2026/0293169 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Methods of reducing capacitance in field-effect transistors24 Sep 2026US 2026/0293269 A1Taiwan Semiconductor Manufacturing Company.Ltd
- High-k isolation of fin structures24 Sep 2026US 2026/0293548 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Vertical gate all around (VGAA) transistors and methods of forming the same1,029US 9,502,265 B1Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound663US 6,413,583 B1APPLIED Materials.Inc. · 2002
- Interlayer dielectric with a composite dielectric stack530US 6,437,444 B2Intel Corporation · 2002
- Process for producing the field oxide of an integrated circuit477US 4,455,193 ACommissariat A L' Energie Atomique · 1984
- Film forming method, computer storage medium, and film forming system471US 9,741,559 B2Tokyo Electron Limited · 2017