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US 12,742,096 B2Granted
Polishing composition for semiconductor process and method for polishing a substrate using the same
AssigneeYcchem Co., Ltd.
InventorsDeok Su Han, Hwan Chul Kim, Seung Chul Hong, Han Teo Park
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Abstract
A polishing composition for a semiconductor process includes polishing particles. The polishing particles have a Ds value of 700 nm2 to 1400 nm2 according to Equation 1 below; Ds = MPS 2 - D 1 0 2 [ Equation 1 ] In Equation 1, MPS is a mean particle size of primary particles of the polishing particles. D10 is a particle diameter at a 10% point on a cumulative curve of a particle size distribution of the primary particles of the polishing particles.
Claims10
A polishing composition for a semiconductor process, the polishing composition comprising:
- polishing particles,
- wherein the polishing particles have a Ds value of 700 nm2 to 1400 nm2 according to Equation 1 below, the Ds value being calculated from a mean particle size (MPS) and a D10 value of primary particles measured by dynamic light scattering (DLS):
- Ds
- =
- MPS
- 2
- -
- D
- 1
-
- 0
- 2
- [
- Equation
-
- 1
- ]
- In Equation 1, MPS is a mean particle size of primary particles of the polishing particles, and D10 is a particle diameter at a 10% point on a cumulative curve of a particle size distribution of the primary particles of the polishing particles, and
- wherein the polishing particles have a Doo value of 45 nm to 56 nm.
16 more elements
Dependencies are inferred from the claim text.