High density capacitor implemented using finfet

An apparatus, comprising:

• an isolation layer;
• a first conductive contact disposed over the isolation layer in a cross-sectional side view that is defined by a first horizontal direction and a vertical direction, wherein the first conductive contact is oriented in the first horizontal direction in a top view that is defined by the first horizontal direction and a second horizontal direction, and wherein the first conductive contact is electrically tied to a first electrical node;
• a second conductive contact disposed over the isolation layer in the cross-sectional side view, wherein the second conductive contact is oriented in the first horizontal direction in the top view, wherein the second conductive contact is electrically tied to a second electrical node, and wherein a voltage difference exists between the first electrical node and the second electrical node;
• and
• a first insulator structure disposed over the isolation layer and between the first conductive contact and the second conductive contact in the cross-sectional side view, wherein the first insulator structure, the first conductive contact, and the second conductive contact collectively form a first capacitor.

An apparatus, comprising:

• a first gate extending in a first horizontal direction in a top view defined by the first horizontal direction and a second horizontal direction different from the first horizontal direction, wherein the first gate is configured to receive a first electrical signal;
• a second gate extending in the first horizontal direction in the top view, wherein the second gate is configured to receive a second electrical signal different from the first electrical signal;
• a first dielectric structure extending in the second horizontal direction in the top view, wherein the first dielectric structure separates the first gate from the second gate, and wherein the first dielectric structure, the first gate, and the second gate collectively define a first capacitor;
• a first conductive contact extending in the first horizontal direction and spaced apart from the first gate in the second horizontal direction in the top view, wherein the first conductive contact is configured to receive the second electrical signal;
• a second conductive contact extending in the first horizontal direction and spaced apart from the second gate in the second horizontal direction in the top view, wherein the second conductive contact is configured to receive the first electrical signal;
• and
• a second dielectric structure extending in the second horizontal direction in the top view, wherein the second dielectric structure separates the first conductive contact from the second conductive contact, and wherein the second dielectric structure, the first conductive contact, and the second conductive contact collectively define a second capacitor.