H10P 95/066
The removal being a selective chemical etching step
Official title: {the removal being a selective chemical etching step, e.g. selective dry etching through a mask}
H10P95/066 (The removal being a selective chemical etching step) appears on 272 US grants and 237 published applications in this corpus.
Search patents in H10P- Granted patents
- 272
- Published applications
- 237
- Assignees
- 108
- Inventors
- 614
- Latest grant
- 19 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 2 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 2 | 0 |
| 1995 | 1 | 0 |
| 1996 | 2 | 0 |
| 1997 | 0 | 0 |
| 1998 | 2 | 0 |
| 1999 | 9 | 0 |
| 2000 | 7 | 0 |
| 2001 | 7 | 2 |
| 2002 | 11 | 5 |
| 2003 | 6 | 6 |
| 2004 | 5 | 10 |
| 2005 | 6 | 1 |
| 2006 | 4 | 4 |
| 2007 | 2 | 1 |
| 2008 | 1 | 1 |
| 2009 | 2 | 1 |
| 2010 | 1 | 1 |
| 2011 | 2 | 0 |
| 2012 | 0 | 3 |
| 2013 | 2 | 7 |
| 2014 | 10 | 6 |
| 2015 | 6 | 14 |
| 2016 | 12 | 13 |
| 2017 | 24 | 40 |
| 2018 | 19 | 17 |
| 2019 | 31 | 23 |
| 2020 | 26 | 23 |
| 2021 | 15 | 18 |
| 2022 | 15 | 14 |
| 2023 | 11 | 10 |
| 2024 | 10 | 6 |
| 2025 | 8 | 9 |
| 2026 | 3 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- High aspect ratio carbon layer etch with improved throughput and process window19 May 2026US 12,635,431 B2Tokyo Electron Limited
- Double-sided integrated circuit module having an exposed semiconductor die24 Feb 2026US 12,564,111 B2Qorvo US, Inc.
- Method of manufacturing a semiconductor device and a semiconductor device27 Jan 2026US 12,538,548 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method of manufacturing semiconductor device having island structure25 Nov 2025US 12,482,666 B2Nanya Technology Corporation
- Integrated circuit device26 Aug 2025US 12,400,867 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method of manufacturing a semiconductor device and a semiconductor device7 May 2026US 2026/0129938 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Double-sided integrated circuit module having an exposed semiconductor die16 Apr 2026US 2026/0107847 A1Qorvo US, Inc.
- Method for planarizing surface of semiconductor device4 Dec 2025US 2025/0372397 A1United Microelectronics Corp.
- Integrated circuit device23 Oct 2025US 2025/0329542 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Cut metal gate process for reducing transistor spacing2 Oct 2025US 2025/0308882 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Substrate manufacturing method and substrate processing apparatus260US 7,256,104 B2Canon Kabushiki Kaisha · 2007
- Method for improving uniformity of chemical-mechanical planarization process238US 8,647,987 B2The Institute of Microelectronics Chinese Academy of Science · 2014
- Method for planarizing a flash memory device121US 6,380,068 B2Macronix International Co., Ltd. · 2002
- Method of planarization of topologies in integrated circuit structures55US 4,954,459 AAdvanced Micro Devices, Inc. · 1990
- Planarization of integrated circuit surfaces through selective photoresist masking54US 3,976,524 AIBM Corporation · 1976