Substrate manufacturing method and substrate processing apparatus

A substrate manufacturing method comprising:

• a preparation step of preparing a substrate which has a silicon layer on an insulating layer;
• and
• a thinning step of thinning the silicon layer on the insulting layer to a desired thickness,
• wherein in the thinning step, a unit thinning step including an oxidation step of oxidizing a surface of the silicon layer by a predetermined thickness not more than a thickness of substantially one lattice and a removal step of selectively removing silicon oxide formed in the oxidation step is performed at least once.

A substrate manufacturing method comprising:

• a preparation step of preparing a substrate which has a silicon layer on an insulating layer;
• and
• a thinning step of thinning the silicon layer on the insulting layer to a desired thickness,
• wherein in the thinning step, a unit thinning step including an oxidation step of oxidizing a surface of the silicon layer by a predetermined thickness, and a removal step of selectively removing silicon oxide formed in the oxidation step is performed not less than twice, and
• the method further comprising a determination step of determining a repetition count of the unit thinning step required to thin the silicon layer to the desired thickness,
• wherein the unit thinning step is repeated in accordance with the repetition count determined in the determination step.

A substrate manufacturing method comprising:

• a preparation step of preparing a substrate which has a silicon layer on an insulating layer;
• and
• a thinning step of thinning the silicon layer on the insulting layer to a desired thickness,
• wherein in the thinning step, a unit thinning step including an oxidation step of oxidizing a surface of the silicon layer by a predetermined thickness, and a removal step of selectively removing silicon oxide formed in the oxidation step is performed not less than twice, and
• the method further comprising:
• a measurement step of measuring a thickness of the silicon layer;
• and
• a determination step of determining the repetition count of the unit thinning step required to thin the silicon layer to the desired thickness, on the basis of a measurement result in the measurement step,
• wherein the unit thinning step is repeated in accordance with the repetition count determined in the determination step.

A substrate manufacturing method comprising:

• a preparation step of preparing a substrate which has a silicon layer on an insulating layer;
• and
• a thinning step of thinning the silicon layer on the insulting layer to a desired thickness,
• wherein in the thinning step, a unit thinning step including an oxidation step of oxidizing a surface of the silicon layer by a predetermined thickness, and a removal step of selectively removing silicon oxide formed in the oxidation step is performed not less than twice, and
• the method further comprising:
• a measurement step of measuring a thickness of the silicon layer;
• and
• a determination step of determining on the basis of a measurement result in the measurement step whether the silicon layer has the desired thickness
• wherein the unit thinning step is repeated until it is determined in the determination step that the silicon layer has the desired thickness.