High-k isolation of fin structures
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKang Huang, Deng-Ming Juo, Wan-Chun Pan, Shich-Chang Suen
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Abstract
Provided are semiconductor devices and methods for fabricating such devices. An exemplary method includes forming fin structures separated by an isolation material; depositing a high-k material over the fin structures and isolation material, wherein the high-k material includes lower portions located between fin structures and an upper portion located above the fin structures; depositing a topography-improving capping layer over the high-k material; performing a chemical mechanical planarization (CMP) process to remove the capping layer and the upper portion of the high-k material and to define high-k insulation segments.
Claims20
A method comprising:
- forming fin structures separated by an isolation material;
- selectively growing a semiconductor liner over the fin structures;
- depositing a high-k material over the fin structures and the isolation material, wherein the high-k material includes lower portions located between the fin structures and includes an upper portion located above the fin structures;
- depositing a capping layer over the high-k material;
- and
- performing a planarization process to remove the capping layer and the upper portion of the high-k material and to define high-k insulation segments.
A method comprising:
- forming a fin structure, wherein the fin structure comprises an epitaxial stack including alternating layers of a first semiconductor material and a second semiconductor material;
- forming a high-k isolation region laterally adjacent to the fin structure, wherein the high-k isolation region has an upper surface;
- and
- removing a top layer of the second semiconductor material of the fin structure to form the fin structure with an uppermost surface located at a height below the upper surface of the high-k isolation region.
A semiconductor device comprising:
- a fin structure;
- a gate structure located over the fin structure;
- and
- a hafnium oxide region laterally adjacent to the fin structure, wherein the hafnium oxide region comprises alternating layers of hafnium oxide and a uniformity-improving material.
Dependencies are inferred from the claim text.