Processing method and semiconductor device manufacturing method
AssigneeCanon Kabushiki Kaisha
InventorsTETSUYA KIMURA, KOSUKE ASANO, HIROSHI KUROSAWA
Life of this patent
Estimating the term…
Abstract
A method of processing a substrate having a first surface with an outer peripheral portion lower than a central portion and forming a second surface flatter than the first surface is provided. The method includes forming a planarization film on at least the outer peripheral portion by placing a curable composition on the substrate, bringing a superstrate into contact with the curable composition, and curing the curable composition, and executing CMP before or after the forming. The second surface is formed through the forming and the executing the CMP.
Claims22
A processing method of processing a substrate having a first surface with an outer peripheral portion lower than a central portion and forming a second surface flatter than the first surface, the method comprising:
- forming a planarization film on at least the outer peripheral portion by placing a curable composition on the substrate, bringing a superstrate into contact with the curable composition, and curing the curable composition;
- and
- executing chemical mechanical polishing (CMP) before or after the forming,
- wherein the second surface is formed through the forming and the executing the CMP.
A processing method comprising:
- forming a resist pattern on a substrate;
- forming a protective film on at least an outer peripheral portion of the substrate by placing a curable composition on the substrate, bringing a superstrate into contact with the curable composition, and curing the curable composition;
- and
- etching the substrate having undergone the forming the protective film.
A semiconductor device manufacturing method comprising:
- a first step of processing a substrate having a first surface with an outer peripheral portion lower than a central portion;
- and
- a second step of obtaining a semiconductor device by further processing the substrate having undergone the first step,
- wherein the first step comprises:
- forming a planarization film on at least the outer peripheral portion by placing a curable composition on the substrate, bringing a superstrate into contact with the curable composition, and curing the curable composition;
- and
- executing chemical mechanical polishing (CMP) before or after the forming the planarization film,
- wherein a second surface flatter than the first surface is formed through the first step.
Dependencies are inferred from the claim text.