H10P 50/285
Of materials not containing si
Official title: {of materials not containing Si, e.g. PZT or Al2O3}
H10P50/285 (Of materials not containing si) appears on 901 US grants and 1,177 published applications in this corpus.
Search patents in H10P- Granted patents
- 901
- Published applications
- 1,177
- Assignees
- 223
- Inventors
- 2,287
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1993 | 1 | 0 |
| 1994 | 3 | 0 |
| 1995 | 5 | 0 |
| 1996 | 2 | 0 |
| 1997 | 2 | 0 |
| 1998 | 4 | 0 |
| 1999 | 4 | 0 |
| 2000 | 7 | 0 |
| 2001 | 9 | 7 |
| 2002 | 18 | 20 |
| 2003 | 26 | 33 |
| 2004 | 21 | 36 |
| 2005 | 12 | 31 |
| 2006 | 17 | 23 |
| 2007 | 13 | 34 |
| 2008 | 16 | 31 |
| 2009 | 15 | 22 |
| 2010 | 17 | 23 |
| 2011 | 14 | 22 |
| 2012 | 19 | 22 |
| 2013 | 24 | 24 |
| 2014 | 23 | 27 |
| 2015 | 25 | 57 |
| 2016 | 64 | 62 |
| 2017 | 43 | 46 |
| 2018 | 40 | 68 |
| 2019 | 61 | 67 |
| 2020 | 75 | 85 |
| 2021 | 54 | 67 |
| 2022 | 62 | 85 |
| 2023 | 48 | 83 |
| 2024 | 55 | 78 |
| 2025 | 69 | 88 |
| 2026 | 33 | 36 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Methods and systems for topography-selective depositions29 Sep 2026US 12,751,229 B2ASM IP Holding B. V.
- Method for forming pattern of metal oxide and method for producing semiconductor element15 Sep 2026US 12,740,356 B2Resonac Corporation
- Plasma processing method and plasma processing system18 Aug 2026US 12,713,856 B2Tokyo Electron Limited
- Introduction of metal in hard mask for high aspect ratio device patterning11 Aug 2026US 12,707,911 B2APPLIED Materials.Inc.
- Surface treatment method, dry etching method, cleaning method, production method for semiconductor device, and etching device21 Jul 2026US 12,690,402 B2Central Glass Company, Limited
- Atomic layer etching method for metal oxide film24 Sep 2026US 2026/0286531 A1SK Specialty Co., Ltd
- Method and system of endpoint detection in etching process24 Sep 2026US 2026/0293614 A1Tokyo Electron Limited
- Cyclic process and method to provide uniform etching of material formed within features having different critical dimension (cd)17 Sep 2026US 2026/0282780 A1Tokyo Electron Limited
- Gate etch back with reduced loading effect10 Sep 2026US 2026/0271372 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure with reduced gate contact resistance and method for manufacturing the same27 Aug 2026US 2026/0255899 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method for forming a high dielectric constant material622US 6,448,192 B1Motorola, Inc. · 2002
- Methods for etch of metal and metal-oxide films564US 9,064,815 B2APPLIED Materials.Inc. · 2015
- Low temperature gas-phase carbon removal531US 9,378,969 B2APPLIED Materials.Inc. · 2016
- Method of atomic layer etching using functional group-containing fluorocarbon494US 9,735,024 B2ASM IP Holding B. V. · 2017
- Process for deposition of titanium oxynitride for use in integrated circuit fabrication446US 9,523,148 B1ASM IP Holdings B.V. · 2016