Process for deposition of titanium oxynitride for use in integrated circuit fabrication

A process for depositing a titanium oxynitride thin film in integrated circuit fabrication comprising:

• contacting a substrate comprising silicon with a titanium reactant;
• exposing the substrate to a purge gas and/or vacuum to remove excess titanium reactant and reaction byproducts, if any;
• contacting the substrate with a second reactant, wherein the second reactant comprises a plurality of reactive species generated by plasma, wherein the plurality of reactive species comprises nitrogen and oxygen, and wherein a ratio of nitrogen reactive species to oxygen reactive species is from about 1:2 to about 250:1;
• exposing the substrate to a purge gas and/or vacuum to remove excess second reactant and reaction byproducts, if any;
• repeating the contacting and exposing steps until a titanium oxynitride thin film of desired thickness has been formed on the substrate comprising silicon, wherein the titanium oxynitride thin film comprises from about 0.05 at-% to about 30 at-% nitrogen.