Plasma processing method and plasma processing system
AssigneeTokyo Electron Limited
InventorsTomohiko Niizeki, Maju Tomura, Yoshihide Kihara
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Abstract
Provided is a plasma processing method performed with a plasma processing apparatus including a chamber. The method includes: (a) providing a substrate in the chamber, the substrate having an organic film and a mask on the organic film, the mask including a silicon-containing film and a carbon-containing film on the silicon-containing film; and (b) forming a plasma from a processing gas in the chamber, the processing gas including an oxygen-containing gas and a gas containing Si or W and a halogen. (b) includes: (b1) forming a protective film on at least the carbon-containing film of the mask; and (b2) etching the organic film through the mask having the protective film formed thereon.
Claims12
A plasma processing method performed with a plasma processing apparatus including a chamber, comprising:
- (a) providing a substrate in the chamber, the substrate having an organic film and a mask on the organic film, the mask including a silicon-containing film and a carbon-containing film on the silicon-containing film;
- and
- (b) forming a plasma from a processing gas in the chamber, the processing gas including an oxygen-containing gas and a gas containing Si or W and a halogen, (b) including:
- (b1) forming a protective film on at least the carbon-containing film of the mask;
- and
- (b2) etching the organic film through the mask having the protective film formed thereon,
- wherein the (b1) continues after a start of the (b2), and the protective film formed in the (b1) on an entirety of a side surface of the carbon-containing film is thinner than an entirety of the protective film formed on a top surface of the carbon-containing film.
A plasma processing method performed with a plasma processing apparatus including a chamber, comprising:
- (a) providing a substrate in the chamber, the substrate having an organic film and a mask on the organic film, the mask including a carbon-containing film;
- and
- (b) forming a plasma from a processing gas in the chamber, the processing gas including an oxygen-containing gas and a gas containing Si or W and a halogen, (b) including:
- (b1) forming a protective film on at least the carbon-containing film of the mask;
- and
- (b2) etching the organic film through the mask having the protective film formed thereon,
- wherein the (b1) continues after a start of the (b2), and the protective film formed in the (b1) on an entirety of a side surface of the carbon-containing film is thinner than the protective film formed on an entirety of a top surface of the carbon-containing film.
Dependencies are inferred from the claim text.