Atomic layer etching method for metal oxide film
AssigneeSK Specialty Co., Ltd
InventorsSung Woong CHUNG, Jung Hun KWAK, Byung Hyang KWON, Yong Jun CHO
Life of this patent
Estimating the term…
Abstract
An atomic layer etching method for a metal oxide film formed on a predetermined underlayer on a substrate, includes: a fluorination step for supplying fluorine-containing gas to react with the surface of the metal oxide film to form a fluorinated surface layer; and a chemical etching step for supplying chemical etching gas to the substrate to remove the fluorinated surface layer. By repeating a cycle comprising the fluorination step and the chemical etching step a predetermined number of times, a portion of the metal oxide film is removed, and the fluorinecontaining gas reacts with the underlayer to form a non-volatile passivation film.
Claims8
A method for atomic layer etching of a metal oxide film formed on a predetermined underlayer on a substrate, comprising:
- a fluorination step of supplying a fluorine-containing gas to react with the surface of the metal oxide film to form a fluorinated surface layer;
- and
- a chemical etching step of supplying a chemical etching gas to the substrate to remove the fluorinated surface layer,
- wherein a cycle including the fluorination step and the chemical etching step is repeated a predetermined number of times to remove a portion of the metal oxide film, and
- the fluorine-containing gas reacts with the underlayer to form a non-volatile passivation layer.
Dependencies are inferred from the claim text.