H10P 50/28
Of insulating materials
Official title: of insulating materials
H10P50/28 (Of insulating materials) appears on 15,044 US grants and 16,032 published applications in this corpus.
Search patents in H10P- Granted patents
- 15,044
- Published applications
- 16,032
- Assignees
- 1,595
- Inventors
- 21,341
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 17 | 0 |
| 1977 | 12 | 0 |
| 1978 | 19 | 0 |
| 1979 | 12 | 0 |
| 1980 | 15 | 0 |
| 1981 | 25 | 0 |
| 1982 | 28 | 0 |
| 1983 | 23 | 0 |
| 1984 | 31 | 0 |
| 1985 | 34 | 0 |
| 1986 | 37 | 0 |
| 1987 | 46 | 0 |
| 1988 | 27 | 0 |
| 1989 | 47 | 0 |
| 1990 | 43 | 0 |
| 1991 | 47 | 0 |
| 1992 | 42 | 0 |
| 1993 | 73 | 0 |
| 1994 | 80 | 0 |
| 1995 | 69 | 0 |
| 1996 | 35 | 0 |
| 1997 | 67 | 0 |
| 1998 | 116 | 0 |
| 1999 | 186 | 0 |
| 2000 | 278 | 0 |
| 2001 | 355 | 140 |
| 2002 | 361 | 358 |
| 2003 | 378 | 404 |
| 2004 | 340 | 481 |
| 2005 | 268 | 500 |
| 2006 | 308 | 437 |
| 2007 | 290 | 420 |
| 2008 | 235 | 386 |
| 2009 | 231 | 291 |
| 2010 | 252 | 269 |
| 2011 | 199 | 263 |
| 2012 | 261 | 315 |
| 2013 | 263 | 355 |
| 2014 | 318 | 488 |
| 2015 | 543 | 998 |
| 2016 | 951 | 1024 |
| 2017 | 1004 | 1006 |
| 2018 | 884 | 970 |
| 2019 | 1015 | 1176 |
| 2020 | 1155 | 1260 |
| 2021 | 967 | 966 |
| 2022 | 762 | 890 |
| 2023 | 621 | 810 |
| 2024 | 637 | 748 |
| 2025 | 662 | 684 |
| 2026 | 375 | 393 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method of fabricating transistors with implanting dopants at first and second dosages in the collector region to form the base region6 Oct 2026US 12,757,420 B2Texas Instruments Incorporated
- Treating silicon nitride based dielectric films6 Oct 2026US 12,757,657 B2APPLIED Materials.Inc.
- Methods for reducing photoresist and carbon etch rates in an ICP process chamber using a silicon-based chamber pre-coat6 Oct 2026US 12,757,659 B2APPLIED Materials.Inc.
- Method for etching an etch layer6 Oct 2026US 12,757,660 B2Lam Research Corporation
- Semiconductor device, semiconductor structure and method for fabricating semiconductor device and semiconductor structure using tilted etch process6 Oct 2026US 12,757,661 B2Nanya Technology Corporation
- Composition for etching and method for manufacturing semiconductor device using same8 Oct 2026US 2026/0308450 A1Soulbrain Co., Ltd.
- Methods of forming semiconductor devices8 Oct 2026US 2026/0313934 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming semiconductor device structure with protection layer8 Oct 2026US 2026/0313937 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Epitaxial structures grown on material with a crystallographic orientation of {110}8 Oct 2026US 2026/0313994 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming source/drain contacts8 Oct 2026US 2026/0314054 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method of spacer patterning to form a target integrated circuit pattern3,272US 9,576,814 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Method for depositing an amorphous carbon layer1,124US 6,573,030 B1APPLIED Materials.Inc. · 2003
- Method for forming a high dielectric constant material622US 6,448,192 B1Motorola, Inc. · 2002
- Method of operating a dual chamber reactor with neutral density decoupled from ion density606US 6,635,578 B1APPLIED Materials.Inc. · 2003
- Plasma treatment method and apparatus581US 5,242,539 AHitachi, Ltd. · 1993