H10P 50/282
Of inorganic materials
Official title: {of inorganic materials}
H10P50/282 (Of inorganic materials) appears on 12,529 US grants and 13,403 published applications in this corpus.
Search patents in H10P- Granted patents
- 12,529
- Published applications
- 13,403
- Assignees
- 1,333
- Inventors
- 18,023
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 13 | 0 |
| 1977 | 9 | 0 |
| 1978 | 17 | 0 |
| 1979 | 11 | 0 |
| 1980 | 11 | 0 |
| 1981 | 24 | 0 |
| 1982 | 18 | 0 |
| 1983 | 16 | 0 |
| 1984 | 20 | 0 |
| 1985 | 25 | 0 |
| 1986 | 31 | 0 |
| 1987 | 37 | 0 |
| 1988 | 22 | 0 |
| 1989 | 30 | 0 |
| 1990 | 31 | 0 |
| 1991 | 35 | 0 |
| 1992 | 34 | 0 |
| 1993 | 61 | 0 |
| 1994 | 65 | 0 |
| 1995 | 52 | 0 |
| 1996 | 23 | 0 |
| 1997 | 54 | 0 |
| 1998 | 88 | 0 |
| 1999 | 157 | 0 |
| 2000 | 225 | 0 |
| 2001 | 286 | 110 |
| 2002 | 286 | 270 |
| 2003 | 292 | 313 |
| 2004 | 265 | 368 |
| 2005 | 211 | 387 |
| 2006 | 244 | 318 |
| 2007 | 223 | 328 |
| 2008 | 182 | 302 |
| 2009 | 186 | 223 |
| 2010 | 190 | 203 |
| 2011 | 158 | 194 |
| 2012 | 199 | 242 |
| 2013 | 185 | 269 |
| 2014 | 252 | 367 |
| 2015 | 419 | 812 |
| 2016 | 792 | 881 |
| 2017 | 854 | 863 |
| 2018 | 760 | 832 |
| 2019 | 880 | 1030 |
| 2020 | 1024 | 1121 |
| 2021 | 854 | 863 |
| 2022 | 669 | 787 |
| 2023 | 553 | 708 |
| 2024 | 547 | 664 |
| 2025 | 588 | 606 |
| 2026 | 321 | 342 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method of fabricating transistors with implanting dopants at first and second dosages in the collector region to form the base region6 Oct 2026US 12,757,420 B2Texas Instruments Incorporated
- Treating silicon nitride based dielectric films6 Oct 2026US 12,757,657 B2APPLIED Materials.Inc.
- Methods for reducing photoresist and carbon etch rates in an ICP process chamber using a silicon-based chamber pre-coat6 Oct 2026US 12,757,659 B2APPLIED Materials.Inc.
- Method for etching an etch layer6 Oct 2026US 12,757,660 B2Lam Research Corporation
- Semiconductor device, semiconductor structure and method for fabricating semiconductor device and semiconductor structure using tilted etch process6 Oct 2026US 12,757,661 B2Nanya Technology Corporation
- Composition for etching and method for manufacturing semiconductor device using same8 Oct 2026US 2026/0308450 A1Soulbrain Co., Ltd.
- Methods of forming semiconductor devices8 Oct 2026US 2026/0313934 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming semiconductor device structure with protection layer8 Oct 2026US 2026/0313937 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming source/drain contacts8 Oct 2026US 2026/0314054 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Methods and systems for dry etching8 Oct 2026US 2026/0314324 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method of spacer patterning to form a target integrated circuit pattern3,272US 9,576,814 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Method for forming a high dielectric constant material622US 6,448,192 B1Motorola, Inc. · 2002
- Method of operating a dual chamber reactor with neutral density decoupled from ion density606US 6,635,578 B1APPLIED Materials.Inc. · 2003
- Plasma treatment method and apparatus581US 5,242,539 AHitachi, Ltd. · 1993
- Method of depositing dielectric film having Si-N bonds by modified peald method575US 8,173,554 B2ASM Japan K .K. · 2012