H10P 50/283
By chemical means
Official title: {by chemical means}
H10P50/283 (By chemical means) appears on 12,024 US grants and 12,868 published applications in this corpus.
Search patents in H10P- Granted patents
- 12,024
- Published applications
- 12,868
- Assignees
- 1,291
- Inventors
- 17,400
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 11 | 0 |
| 1977 | 8 | 0 |
| 1978 | 14 | 0 |
| 1979 | 9 | 0 |
| 1980 | 11 | 0 |
| 1981 | 24 | 0 |
| 1982 | 18 | 0 |
| 1983 | 15 | 0 |
| 1984 | 20 | 0 |
| 1985 | 23 | 0 |
| 1986 | 30 | 0 |
| 1987 | 35 | 0 |
| 1988 | 22 | 0 |
| 1989 | 29 | 0 |
| 1990 | 30 | 0 |
| 1991 | 34 | 0 |
| 1992 | 31 | 0 |
| 1993 | 60 | 0 |
| 1994 | 63 | 0 |
| 1995 | 52 | 0 |
| 1996 | 22 | 0 |
| 1997 | 49 | 0 |
| 1998 | 86 | 0 |
| 1999 | 153 | 0 |
| 2000 | 220 | 0 |
| 2001 | 281 | 109 |
| 2002 | 284 | 267 |
| 2003 | 285 | 309 |
| 2004 | 262 | 366 |
| 2005 | 209 | 384 |
| 2006 | 243 | 316 |
| 2007 | 222 | 320 |
| 2008 | 181 | 296 |
| 2009 | 181 | 220 |
| 2010 | 186 | 196 |
| 2011 | 154 | 188 |
| 2012 | 197 | 234 |
| 2013 | 178 | 257 |
| 2014 | 238 | 347 |
| 2015 | 391 | 756 |
| 2016 | 753 | 835 |
| 2017 | 793 | 809 |
| 2018 | 718 | 799 |
| 2019 | 836 | 978 |
| 2020 | 975 | 1066 |
| 2021 | 818 | 828 |
| 2022 | 642 | 764 |
| 2023 | 532 | 682 |
| 2024 | 521 | 631 |
| 2025 | 569 | 583 |
| 2026 | 306 | 328 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Treating silicon nitride based dielectric films6 Oct 2026US 12,757,657 B2APPLIED Materials.Inc.
- Methods for reducing photoresist and carbon etch rates in an ICP process chamber using a silicon-based chamber pre-coat6 Oct 2026US 12,757,659 B2APPLIED Materials.Inc.
- Method for etching an etch layer6 Oct 2026US 12,757,660 B2Lam Research Corporation
- Semiconductor device, semiconductor structure and method for fabricating semiconductor device and semiconductor structure using tilted etch process6 Oct 2026US 12,757,661 B2Nanya Technology Corporation
- Semiconductor processing preclean methods and apparatus6 Oct 2026US 12,757,665 B2ASM IP Holding B. V.
- Composition for etching and method for manufacturing semiconductor device using same8 Oct 2026US 2026/0308450 A1Soulbrain Co., Ltd.
- Methods of forming semiconductor devices8 Oct 2026US 2026/0313934 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for forming semiconductor device structure with protection layer8 Oct 2026US 2026/0313937 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Methods and systems for dry etching8 Oct 2026US 2026/0314324 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Multi-function etching sacrificial layers to protect three-dimensional dummy fins in semiconductor devices8 Oct 2026US 2026/0314347 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method of spacer patterning to form a target integrated circuit pattern3,272US 9,576,814 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Method for forming a high dielectric constant material622US 6,448,192 B1Motorola, Inc. · 2002
- Method of operating a dual chamber reactor with neutral density decoupled from ion density606US 6,635,578 B1APPLIED Materials.Inc. · 2003
- Plasma treatment method and apparatus581US 5,242,539 AHitachi, Ltd. · 1993
- Method of depositing dielectric film having Si-N bonds by modified peald method575US 8,173,554 B2ASM Japan K .K. · 2012