Semiconductor processing preclean methods and apparatus

A method for precleaning a substrate, the method comprising:

• placing the substrate in a reaction chamber of a semiconductor processing system, the semiconductor processing system comprising:
• an anhydrous hydrogen fluoride delivery system comprising:
• an upstream portion in fluid communication with an anhydrous hydrogen fluoride source, the upstream portion comprising:
• a pressure gauge configured to be in fluid communication with the anhydrous hydrogen fluoride source;
• a purifier in fluid communication with the pressure gauge and configured to remove water from anhydrous hydrogen fluoride from the anhydrous hydrogen fluoride source;
• a first anhydrous hydrogen fluoride conduit for forming a first portion of a flow path between the anhydrous hydrogen fluoride source and the reaction chamber;
• a mass flow controller configured to be in fluid communication with the first anhydrous hydrogen fluoride conduit and the first portion of the flow path;
• and
• one or more upstream heater jackets thermally coupled to the pressure gauge, the first anhydrous hydrogen fluoride conduit, and the mass flow controller;
• a downstream portion downstream from and in fluid communication with the upstream portion, the downstream portion comprising:
• a second anhydrous hydrogen fluoride conduit for forming a second portion of the flow path between the anhydrous hydrogen fluoride source and the reaction chamber, the second anhydrous hydrogen fluoride conduit being connected to the mass flow controller and configured to fluidly connect, via the mass flow controller, the upstream portion with the reaction chamber;
• and
• one or more downstream heater jackets thermally coupled to the second anhydrous hydrogen fluoride conduit;
• a water vapor delivery system comprising:
• a water vapor source in fluid communication with a carrier gas source and configured to supply water vapor;
• a water vapor supply conduit disposed downstream of the water vapor source and forming a portion of a flow path between the water vapor source and the reaction chamber;
• a carrier gas conduit disposed upstream of the water vapor source and forming a portion of a flow path between the carrier gas source and the water vapor source;
• one or more water vapor source heater jackets thermally coupled to the water vapor source;
• one or more water vapor supply heater jackets disposed downstream of the one or more water vapor source heater jackets and thermally coupled to the water vapor supply conduit;
• and
• a pressure flow controller disposed upstream of the water vapor source and the one or more water vapor source heater jackets and configured to be in fluid communication with the carrier gas source and the water vapor source, the pressure flow controller configured to regulate a pressure of carrier gas from the carrier gas source flowing to the water vapor source via the carrier gas conduit,
• wherein the reaction chamber is in fluid communication with the anhydrous hydrogen fluoride delivery system and the water vapor delivery system;
• and
• precleaning the substrate by removing material from a surface of the substrate, wherein removing the material comprises:
• flowing anhydrous hydrogen fluoride into the reaction chamber;
• and
• flowing water vapor into the reaction chamber.