Composition for etching and method for manufacturing semiconductor device using same

A method for forming a cell gate structure, the method comprising:

• forming a cell gate structure on a substrate by alternatively stacking a plurality of interlayer insulating layers and a plurality of gate electrode layers;
• forming a plurality of holes through the cell gate structure;
• and
• selectively etching a plurality of nitride layers in the cell gate structure by a composition, wherein the composition for etching comprises:
• a first inorganic acid,
• a first additive, being any one selected from a group consisting of phosphorous acid, an organic phosphite, a hypophosphite, and mixtures thereof,
• a second additive comprising a compound selected from Chemical Formula 300, and a solvent,
• wherein:
• (In Chemical Formula 300, each R1 to R4 is each independently selected from a group consisting of a hydrogen atom, a halogen atom, a hydroxyl group, an alkyl group having 1 to 10 carbon atoms, an alkoxy group having 1 to 10 carbon atoms, an aminoalkyl group having 1 to 10 carbon atoms, and an aminoalkoxy group having 1 to 10 carbon atoms, and an aryl group having 6 to 30 carbon atoms, 2 or 3 of R1 to R4 are hydroxy groups, and at least one of R1 to R4 is an alkoxy group having 1 to 10 carbon atoms, an aminoalkyl group having 1 to 10 carbon atoms or an aminoalkoxy group having 1 to 10 carbon atoms.