Methods for reducing photoresist and carbon etch rates in an ICP process chamber using a silicon-based chamber pre-coat
AssigneeApplied Materials, Inc.
InventorsSonam Dorje Sherpa, Alok Ranjan
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Abstract
The present disclosure relates to a method for reducing photoresist and carbon etch rates in a process chamber using a silicon-based chamber pre-coat. The method includes forming, in-situ the process chamber, a coating layer on a surface of a lid assembly of the process chamber, the coating layer comprising a silicon-containing material, and etching a target layer disposed on a substrate through a mask layer having a carbon-containing material, while the substrate is disposed on an electrostatic chuck below the coating layer of the lid assembly.
Claims19
A method for etching a target layer disposed on a substrate through a mask layer having a carbon-containing material, the method comprising:
- forming, in-situ a process chamber, a coating layer on a surface of a lid assembly of the process chamber, the coating layer comprising a silicon-containing material, wherein the coating layer and the mask layer are compositionally distinct;
- and
- etching the target layer while the substrate is disposed on an electrostatic chuck below the coating layer of the lid assembly.
A method for processing a substrate, the method comprising:
- forming, in-situ a plasma process chamber, a coating layer on a surface of a lid assembly of the plasma process chamber, the coating layer comprising a silicon-containing material;
- transferring the substrate into the plasma process chamber, the substrate comprising a target layer and a mask layer over the target layer, the mask layer comprising a carbon-containing material, wherein the coating layer and the mask layer are compositionally distinct;
- and
- etching the target layer below the coated lid assembly preferentially relative to the mask layer by using a plasma-excited process gas.
Dependencies are inferred from the claim text.