Method of atomic layer etching using functional group-containing fluorocarbon
AssigneeASM IP Holding B.V.
InventorMasaru Zaitsu
Life of this patent
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Abstract
A method of atomic layer etching (ALE) uses a cycle including: continuously providing a noble gas; providing a pulse of an etchant gas to the reaction space to chemisorb the etchant gas in an unexcited state in a self-limiting manner on a surface of a substrate in the reaction space; and providing a pulse of a reactive species of a noble gas in the reaction space to contact the etchant gas-chemisorbed surface of the substrate with the reactive species so that the layer on the substrate is etched. The etchant gas is a fluorocarbon gas containing a functional group with a polarity.
Claims14
A method for etching a layer on a substrate placed in a reaction space by an atomic layer etching (ALE) process which comprises at least one etching cycle, wherein an etching cycle comprises:
- continuously providing a noble gas in the reaction space;
- providing a pulse of an etchant gas in the reaction space to chemisorb the etchant gas in an unexcited state on a surface of the substrate in a self-limiting manner, said etchant gas being a fluorocarbon gas containing a functional group with a polarity, said surface of the substrate being constituted by an oxide mineral or nitride mineral;
- and
- providing a pulse of a reactive species of a noble gas in the reaction space to contact the etchant gas-chemisorbed surface of the substrate with the reactive species so that the surface of the layer on the substrate is etched.
Dependencies are inferred from the claim text.