Introduction of metal in hard mask for high aspect ratio device patterning
AssigneeApplied Materials, Inc.
InventorsHan Wang, Chao Li, Yu Yang, Gene Lee
Life of this patent
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Abstract
A method for patterning a boron-containing hard mask includes patterning an oxide hard mask formed on a boron-containing hard mask, and patterning the boron-containing hard mask using the patterned oxide hard mask, wherein the oxide hard mask comprises silicon oxide (SiO2), the boron-containing hard mask is doped with one or more metal elements, and the patterning of the boron-containing hard mask comprises etching the boron-containing hard mask through openings of the patterned oxide hard mask using an etching gas mixture comprising chlorine (Cl2), hydrogen bromide (HBr), and oxygen (O2).
Claims20
A method for patterning a boron-containing hard mask, comprising:
- patterning an oxide hard mask formed on a boron-containing hard mask;
- and
- patterning the boron-containing hard mask using the patterned oxide hard mask, wherein
- the oxide hard mask comprises silicon oxide (SiO2),
- the boron-containing hard mask is doped with one or more metal elements, and
- the patterning of the boron-containing hard mask comprises etching the boron-containing hard mask through openings of the patterned oxide hard mask using an etching gas mixture comprising chlorine (Cl2), hydrogen bromide (HBr), and oxygen (O2).
A method for patterning a boron-containing hard mask, comprising:
- patterning an oxide hard mask formed on a boron-containing hard mask;
- and
- patterning the boron-containing hard mask using the patterned oxide hard mask, wherein
- the oxide hard mask comprises silicon oxide (SiO2), and
- the patterning of the boron-containing hard mask comprises etching the boron-containing hard mask through openings of the patterned oxide hard mask using an etching gas mixture comprising chlorine (Cl2), hydrogen bromide (HBr), oxygen (O2), and a metal-containing etchant.
A method for patterning a boron-containing hard mask, comprising:
- patterning an oxide hard mask formed on a boron-containing hard mask;
- and
- patterning the boron-containing hard mask using the patterned oxide hard mask, wherein
- the oxide hard mask comprises silicon oxide (SiO2),
- the boron-containing hard mask is doped with one or more metal elements, and
- the patterning of the boron-containing hard mask comprises etching the boron-containing hard mask through openings of the patterned oxide hard mask using an etching gas mixture comprising chlorine (Cl2), hydrogen bromide (HBr), oxygen (O2), and a metal-containing etchant.
Dependencies are inferred from the claim text.