H10P 50/268
Of silicon-containing layers
Official title: {of silicon-containing layers}
H10P50/268 (Of silicon-containing layers) appears on 1,663 US grants and 1,455 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,663
- Published applications
- 1,455
- Assignees
- 320
- Inventors
- 3,188
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 2 | 0 |
| 1979 | 0 | 0 |
| 1980 | 5 | 0 |
| 1981 | 7 | 0 |
| 1982 | 8 | 0 |
| 1983 | 15 | 0 |
| 1984 | 21 | 0 |
| 1985 | 12 | 0 |
| 1986 | 12 | 0 |
| 1987 | 14 | 0 |
| 1988 | 14 | 0 |
| 1989 | 17 | 0 |
| 1990 | 3 | 0 |
| 1991 | 9 | 0 |
| 1992 | 25 | 0 |
| 1993 | 30 | 0 |
| 1994 | 34 | 0 |
| 1995 | 15 | 0 |
| 1996 | 9 | 0 |
| 1997 | 33 | 0 |
| 1998 | 22 | 0 |
| 1999 | 42 | 0 |
| 2000 | 50 | 0 |
| 2001 | 57 | 12 |
| 2002 | 51 | 55 |
| 2003 | 57 | 43 |
| 2004 | 60 | 70 |
| 2005 | 39 | 54 |
| 2006 | 28 | 43 |
| 2007 | 37 | 71 |
| 2008 | 35 | 50 |
| 2009 | 28 | 40 |
| 2010 | 31 | 23 |
| 2011 | 27 | 36 |
| 2012 | 19 | 30 |
| 2013 | 35 | 39 |
| 2014 | 37 | 52 |
| 2015 | 48 | 86 |
| 2016 | 93 | 91 |
| 2017 | 71 | 55 |
| 2018 | 39 | 58 |
| 2019 | 74 | 92 |
| 2020 | 95 | 90 |
| 2021 | 56 | 66 |
| 2022 | 65 | 80 |
| 2023 | 44 | 79 |
| 2024 | 42 | 44 |
| 2025 | 62 | 60 |
| 2026 | 34 | 36 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device and method of manufacturing the same6 Oct 2026US 12,757,470 B2Semes Co., Ltd.
- Gate feature in FinFET device29 Sep 2026US 12,751,070 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Selective etching and deposition of memory layers to provide capacitor-to-active silicon electrical coupling15 Sep 2026US 12,740,041 B2Lam Research Corporation
- Fabricating of a quantum device with autoalignment of the gates on their respective active zone region15 Sep 2026US 12,740,105 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Stealth patterning formation for bonding improvement1 Sep 2026US 12,727,415 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Systems and methods for etching a high aspect ratio structure1 Oct 2026US 2026/0305206 A1Lam Research Corporation
- Etching method24 Sep 2026US 2026/0293550 A1Resonac Corporation
- Semiconductor memory device and method for manufacturing the same17 Sep 2026US 2026/0282315 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Plasma process method and plasma processing device10 Sep 2026US 2026/0269185 A1Advanced Micro-Fabrication Equipment Inc. China
- Substrate processing method and plasma processing apparatus10 Sep 2026US 2026/0271642 A1Tokyo Electron Limited
Most cited
By later US patents
- Method for depositing an amorphous carbon layer1,124US 6,573,030 B1APPLIED Materials.Inc. · 2003
- Method and apparatus for surface treatment by plasma617US 4,579,623 AHitachi, Ltd. · 1986
- Photochemical vapor phase reaction apparatus and method of causing a photochemical vapor phase reaction583US 5,288,684 ASemiconductor Energy Laboratory Co.Ltd. · 1994
- Plasma treatment method and apparatus581US 5,242,539 AHitachi, Ltd. · 1993
- Selective titanium nitride etch541US 9,275,834 B1APPLIED Materials.Inc. · 2016