Etching method

Abstract

There is provided an etching method capable of selectively etching an etching object in comparison to a non-etching object. The etching method includes an etching step of carrying out etching by bringing an etching gas containing an acid fluoride and a saturated fluorocarbon into contact with a member to be etched, which has an etching object which is an object to be etched by the etching gas and a non-etching object which is not an object to be etched by the etching gas, in a presence of a plasma, and selectively etching the etching object in comparison to the non-etching object. The etching object has a silicon-containing material, and the non-etching object has a carbon-containing material.

Dependencies are inferred from the claim text.