Stealth patterning formation for bonding improvement
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMing-Tsu Chung, Yung-Chi Lin, Yen-Ming Chen
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Abstract
A method includes forming a patterned treating mask over a first surface dielectric layer of a first package component, wherein portions of the first surface dielectric layer are exposed through the patterned treating mask, performing a selective plasma treatment on the portions of the first surface dielectric layer that are exposed through the patterned treating mask to form treated portions, removing the patterned treating mask, and bonding a second surface dielectric layer in a second package component to the first surface dielectric layer.
Claims20
A method comprising:
- forming a patterned treating mask over a first surface dielectric layer of a first package component, wherein first portions of the first surface dielectric layer are exposed through the patterned treating mask;
- performing a selective plasma treatment on the first portions of the first surface dielectric layer that are exposed through the patterned treating mask to form first treated portions;
- removing the patterned treating mask;
- and
- bonding a second surface dielectric layer in a second package component to the first surface dielectric layer.
A method comprising:
- forming a first package component comprising:
- forming a first surface dielectric layer comprising:
- forming first portions extending from a surface of the first surface dielectric layer into the first surface dielectric layer, wherein the first portions have a first oxygen atomic percentage, wherein the forming the first portions comprises a treatment process using a process gas comprising oxygen;
- and
- forming second portions separating the first portions from each other, wherein the second portions have a second oxygen atomic percentage lower than the first oxygen atomic percentage.
A method comprising:
- forming a device die comprising:
- forming a silicon-containing dielectric layer comprising:
- forming first portions extending from a top surface of the silicon-containing dielectric layer to an intermediate level between the top surface and a bottom surface of the silicon-containing dielectric layer, wherein the first portions are in second portions, and the second portions extend from the top surface to the bottom surface, wherein the first portions have a higher oxygen atomic percentage than the second portions.
Dependencies are inferred from the claim text.