US 2026/0305206 A1 · SYSTEMS AND METHODS FOR ETCHING A HIGH ASPECT RATIO STRUCTURE

Abstract

A method for etching a stack is described. The method includes etching a first nitrogen-containing layer of the stack by applying a non-metal gas and discontinuing the application of the non-metal gas upon determining that a first oxide layer is reached. The first oxide layer is under the first nitrogen-containing layer. The method further includes etching the first oxide layer by applying a metal-containing gas. The application of the metal-containing gas is discontinued upon determining that a second nitrogen-containing layer will be reached. The second nitrogen-containing layer is situated under the first oxide layer. The method includes etching the second nitrogen-containing layer by applying the non-metal gas.

Claims21

Dependent claims

A method for processing a substrate stack, comprising:

applying a first chemistry to process a first layer of the substrate stack;
applying a second chemistry to process a second layer of the substrate stack;
controlling a low frequency (LF) radio frequency (RF) generator to generate a first plurality of states while said applying the first chemistry and to generate a second plurality of states while said applying the second chemistry;
and
controlling a high frequency (HF) RF generator to generate a third plurality of states while said applying the first chemistry and to generate a fourth plurality of states while said applying the second chemistry.

2 more elements

A plasma system for processing a substrate stack, comprising:

a first valve;
a second valve;
a low frequency (LF) radio frequency (RF) generator configured to generate an LF RF signal;
a high frequency (HF) RF generator configured to generate an HF RF signal;
a match coupled to the LF RF and HF RF generators to receive the LF and HF RF signals to provide a modified RF signal;
a plasma chamber coupled to the match to receive the modified RF signal;
and
a computer coupled to the first and second valves and to the LF and HF RF generators, wherein the computer is configured to:
control the first valve to apply a first chemistry to process a first layer of the substrate stack;
control the second valve to apply a second chemistry to process a second layer of the substrate stack;
control the LF RF generator to generate a first plurality of states of the LF RF signal during the application of the first chemistry;
control the LF RF generator to generate a second plurality of states of the LF RF signal during the application of the second chemistry;
control the HF RF generator to generate a third plurality of states of the HF RF signal during the application of the first chemistry;
and
control the HF RF generator to generate a fourth plurality of states of the HF RF signal during the application of the second chemistry.

12 more elements

Dependencies are inferred from the claim text.

Systems and methods for etching a high aspect ratio structure

Life of this patent

Systems and methods for etching a high aspect ratio structure

Life of this patent

Abstract

Claims21