H10P 50/267
Using plasmas
Official title: {using plasmas}
H10P50/267 (Using plasmas) appears on 3,570 US grants and 3,279 published applications in this corpus.
Search patents in H10P- Granted patents
- 3,570
- Published applications
- 3,279
- Assignees
- 566
- Inventors
- 6,392
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 2 | 0 |
| 1978 | 4 | 0 |
| 1979 | 2 | 0 |
| 1980 | 8 | 0 |
| 1981 | 11 | 0 |
| 1982 | 14 | 0 |
| 1983 | 21 | 0 |
| 1984 | 23 | 0 |
| 1985 | 18 | 0 |
| 1986 | 15 | 0 |
| 1987 | 22 | 0 |
| 1988 | 16 | 0 |
| 1989 | 31 | 0 |
| 1990 | 12 | 0 |
| 1991 | 21 | 0 |
| 1992 | 39 | 0 |
| 1993 | 53 | 0 |
| 1994 | 51 | 0 |
| 1995 | 39 | 0 |
| 1996 | 19 | 0 |
| 1997 | 50 | 0 |
| 1998 | 45 | 0 |
| 1999 | 90 | 0 |
| 2000 | 113 | 0 |
| 2001 | 129 | 39 |
| 2002 | 122 | 153 |
| 2003 | 134 | 129 |
| 2004 | 138 | 161 |
| 2005 | 91 | 135 |
| 2006 | 76 | 107 |
| 2007 | 87 | 128 |
| 2008 | 68 | 89 |
| 2009 | 63 | 78 |
| 2010 | 79 | 51 |
| 2011 | 55 | 71 |
| 2012 | 49 | 60 |
| 2013 | 63 | 68 |
| 2014 | 72 | 108 |
| 2015 | 100 | 187 |
| 2016 | 178 | 192 |
| 2017 | 160 | 133 |
| 2018 | 106 | 137 |
| 2019 | 162 | 190 |
| 2020 | 200 | 199 |
| 2021 | 143 | 165 |
| 2022 | 141 | 172 |
| 2023 | 105 | 163 |
| 2024 | 113 | 136 |
| 2025 | 133 | 148 |
| 2026 | 83 | 80 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor manufacturing apparatus and semiconductor device manufacturing method6 Oct 2026US 12,755,946 B2Kioxia Corporation
- Semiconductor device and method of manufacturing the same6 Oct 2026US 12,757,470 B2Semes Co., Ltd.
- Substrate processing device and substrate processing method29 Sep 2026US 12,749,656 B2Semes Co., Ltd.
- Gate feature in FinFET device29 Sep 2026US 12,751,070 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Selective etching and deposition of memory layers to provide capacitor-to-active silicon electrical coupling15 Sep 2026US 12,740,041 B2Lam Research Corporation
- Methods and systems for dry etching8 Oct 2026US 2026/0314324 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Etching method and etching apparatus1 Oct 2026US 2026/0305203 A1Hitachi High-Tech Corporation
- Systems and methods for etching a high aspect ratio structure1 Oct 2026US 2026/0305206 A1Lam Research Corporation
- Semiconductor package and method of manufacturing the semiconductor package1 Oct 2026US 2026/0305403 A1Samsung Electronics Co., Ltd.
- Etching method24 Sep 2026US 2026/0293550 A1Resonac Corporation
Most cited
By later US patents
- Method for depositing an amorphous carbon layer1,124US 6,573,030 B1APPLIED Materials.Inc. · 2003
- Method of selectively etching titanium-containing materials on a semiconductor wafer using remote plasma generation778US 5,326,427 ALSI Logic Corporation · 1994
- Method and apparatus for surface treatment by plasma617US 4,579,623 AHitachi, Ltd. · 1986
- Photochemical vapor phase reaction apparatus and method of causing a photochemical vapor phase reaction583US 5,288,684 ASemiconductor Energy Laboratory Co.Ltd. · 1994
- Plasma treatment method and apparatus581US 5,242,539 AHitachi, Ltd. · 1993