Etching method and etching apparatus
AssigneeHitachi High-Tech Corporation
InventorsNobuya MIYOSHI, Nicholas McDowell, Phuc N. Phan
Life of this patent
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Abstract
A molybdenum film formed on a wafer placed on a wafer stage in a processing chamber inside a vacuum container is etched by carrying out: a step of supplying an oxygen radical or ozone and a hydrogen radical to the wafer to form an oxide layer on a surface of a metal molybdenum film; and a step of generating a plasma to form a reactive radical from a chlorine-containing gas and thereby eliminating/removing the oxide layer, and the step of forming the oxide layer and the step of eliminating/removing the oxide layer are repeatedly performed.
Claims7
An etching method of etching a metal molybdenum film formed on a wafer, comprising:
- a first step of supplying an oxygen radical or ozone and a hydrogen radical to the wafer placed on a wafer stage in a processing chamber inside a vacuum container and thereby oxidizing a surface of the molybdenum film;
- and
- a second step of supplying the wafer with a reactive radical by using a plasma to eliminate/remove an oxide layer on the surface of the molybdenum film, wherein
- the first step and the second step are performed in repetition.
An etching apparatus, comprising:
- a vacuum container having therein a processing chamber and a plasma source provided above the processing chamber;
- a wafer stage which is provided in the processing chamber and on which a wafer having a molybdenum film formed thereon is placed;
- a first mass flow controller for supplying the plasma source with a processing gas;
- and
- a control unit for controlling the etching of the molybdenum film, wherein
- the control unit carries out, in repetition:
- a first step of introducing, into the plasma source, an oxygen- and hydrogen-containing gas whose supply flow rate is adjusted by the first mass flow controller, causing the plasma source to generate a plasma, and thereby supplying the wafer with an oxygen radical or ozone, and a hydrogen radical to oxidize a surface of the molybdenum film;
- and a second step of introducing, into the plasma source, a chlorine-containing gas whose supply flow rate is adjusted by the first mass flow controller, causing the plasma source to generate a plasma, and thereby supplying the wafer with a reactive radical thus generated to eliminate/remove an oxide layer formed on the surface of the molybdenum film.
Dependencies are inferred from the claim text.