Selective titanium nitride etch
AssigneeApplied Materials, Inc.
InventorsSeung Park, Mikhail Korolik, Anchuan Wang, Nitin K. Ingle
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Abstract
A method of removing titanium nitride is described. The silicon nitride resides on a patterned substrate. The titanium nitride is removed with a gas-phase etch using plasma effluents formed in a remote plasma from a fluorine-containing precursor, a nitrogen-and-hydrogen-containing precursor and an oxygen-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride.
Claims15
A method of removing titanium nitride from a patterned substrate, the method comprising:
- placing the patterned substrate in a substrate processing region of a substrate processing chamber;
- flowing a fluorine-containing precursor, an oxygen-containing precursor and a nitrogen-and-hydrogen-containing precursor into a remote plasma region fluidly coupled to the substrate processing region while forming a remote plasma in the remote plasma region to produce plasma effluents;
- flowing the plasma effluents into the substrate processing region through through-holes in a showerhead disposed between the substrate processing region and the remote plasma region;
- and
- etching the titanium nitride with the plasma effluents.
A method of etching titanium nitride from a patterned substrate, the method comprising:
- placing the patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate has an exposed titanium nitride portion and a titanium-free portion;
- flowing a radical-fluorine precursor, a radical-oxygen precursor and a radical-nitrogen-hydrogen precursor into the substrate processing region;
- etching the exposed titanium nitride portion such that the exposed titanium nitride portion etches more rapidly than the titanium-free portion by an etch selectivity ratio of more than 10:1, and
- exposing the titanium-free portion.
A method of removing titanium nitride from a patterned substrate, the method comprising:
- placing the patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate comprises an exposed titanium nitride portion overlying a silicon nitride portion;
- flowing a fluorine-containing precursor, an oxygen-containing precursor and a nitrogen-and-hydrogen-containing precursor into a remote plasma region fluidly coupled to the substrate processing region while forming a remote plasma in the remote plasma region to produce plasma effluents;
- flowing the plasma effluents into the substrate processing region through through-holes in a showerhead disposed between the substrate processing region and the remote plasma region;
- and
- etching the titanium nitride with the plasma effluents, wherein etching the titanium nitride with the plasma effluents comprises removing the exposed titanium nitride portion and a titanium silicide portion to expose the silicon nitride portion.
Dependencies are inferred from the claim text.