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AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsBo-Rong LIN, Kuo-Cheng CHIANG, Shi-Ning JU, Guan-Lin CHEN, Chih-Hao WANG
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A semiconductor memory device includes a first dielectric wall, a second dielectric wall, first channel portions, second channel portions, an isolation wall, and a dielectric feature. The second dielectric wall is spaced apart from the first dielectric wall in a first direction. The first channel portions are disposed on a side of the first dielectric wall and are spaced apart from each other in a second direction transverse to the first direction. The second channel portions are disposed on a side of the second dielectric wall and are spaced apart from each other in the second direction. The isolation wall is located between the first dielectric wall and the second dielectric wall. The dielectric feature is disposed to separate the first dielectric wall and the isolation wall, and is disposed on the other side of the first dielectric wall opposite to the first channel portions in the first direction.
A semiconductor memory device, comprising:
A semiconductor memory device, comprising:
A semiconductor memory device, comprising:
Dependencies are inferred from the claim text.