Substrate processing method and plasma processing apparatus
AssigneeTokyo Electron Limited
InventorsRyutaro SUDA, Maju TOMURA
Life of this patent
Estimating the term…
Abstract
A technique improves selectivity in etching of a silicon-containing film over etching of a mask in plasma etching. A substrate processing method includes placing a substrate in a chamber in a plasma processing apparatus. The substrate includes a silicon-containing film and a mask on the silicon-containing film. The substrate processing method further includes generating plasma from a first process gas containing a hydrogen fluoride gas in the chamber. The generating plasma includes etching the silicon-containing film with a chemical species contained in the plasma. A flow rate of the hydrogen fluoride gas is at least 25 vol % of a total flow rate of the non-inert components of the first process gas.
Claims13
A substrate processing method, comprising:
- placing a substrate in a chamber, the substrate including a silicon-containing film and a mask on the silicon-containing film;
- and
- generating plasma from a first process gas containing a hydrogen fluoride gas in the chamber and etching the silicon-containing film,
- wherein a flow rate of the hydrogen fluoride gas is at least 25 vol % of a total flow rate of non-inert components of the first process gas.
A plasma processing apparatus, comprising:
- a chamber having a gas inlet and a gas outlet;
- a plasma generator;
- and
- a controller configured to cause
- placing a substrate in the chamber, the substrate including a silicon-containing film and a mask on the silicon-containing film, and
- generating plasma from a first process gas containing a hydrogen fluoride gas in the chamber and etching the silicon-containing film,
- wherein the generating plasma and the etching include controlling a flow rate of the hydrogen fluoride gas to at least 25 vol % of a total flow rate of the non-inert components of the first process gas.
Dependencies are inferred from the claim text.