H10P 14/6686
The compound being a molecule comprising at least one silicon-oxygen bond and
Official title: {the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane}
H10P14/6686 (The compound being a molecule comprising at least one silicon-oxygen bond and) appears on 1,678 US grants and 1,700 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,678
- Published applications
- 1,700
- Assignees
- 388
- Inventors
- 2,945
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 4 | 0 |
| 1987 | 5 | 0 |
| 1988 | 5 | 0 |
| 1989 | 6 | 0 |
| 1990 | 5 | 0 |
| 1991 | 9 | 0 |
| 1992 | 6 | 0 |
| 1993 | 8 | 0 |
| 1994 | 15 | 0 |
| 1995 | 15 | 0 |
| 1996 | 14 | 0 |
| 1997 | 18 | 0 |
| 1998 | 29 | 0 |
| 1999 | 34 | 0 |
| 2000 | 62 | 0 |
| 2001 | 74 | 38 |
| 2002 | 87 | 110 |
| 2003 | 129 | 142 |
| 2004 | 96 | 143 |
| 2005 | 71 | 121 |
| 2006 | 100 | 150 |
| 2007 | 93 | 113 |
| 2008 | 68 | 92 |
| 2009 | 75 | 93 |
| 2010 | 79 | 75 |
| 2011 | 80 | 55 |
| 2012 | 45 | 43 |
| 2013 | 60 | 27 |
| 2014 | 37 | 23 |
| 2015 | 29 | 38 |
| 2016 | 34 | 32 |
| 2017 | 29 | 38 |
| 2018 | 29 | 49 |
| 2019 | 38 | 43 |
| 2020 | 25 | 35 |
| 2021 | 37 | 42 |
| 2022 | 22 | 46 |
| 2023 | 29 | 36 |
| 2024 | 26 | 42 |
| 2025 | 25 | 52 |
| 2026 | 21 | 22 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Alkoxydisiloxanes and dense organosilica films made therefrom29 Sep 2026US 12,751,224 B2Versum Materials US, LLC
- Semiconductor device and method8 Sep 2026US 12,733,526 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method of manufacturing integrated circuit device1 Sep 2026US 12,727,406 B2Samsung Electronics Co., Ltd.
- Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium25 Aug 2026US 12,721,065 B2Kokusai Electric Corporation
- Structure and method for deep trench capacitor with reduced deformation11 Aug 2026US 12,707,655 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method8 Oct 2026US 2026/0314458 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Alkoxydisiloxanes and dense organosilica films made therefrom17 Sep 2026US 2026/0282779 A1Versum Materials US, LLC
- Precursor for forming low dielectric constant silicon-containing thin film and method for forming low dielectric constant silicon-containing thin film using same10 Sep 2026US 2026/0271637 A1SK hynix Inc.
- Film forming method and article manufacturing method10 Sep 2026US 2026/0271683 A1Canon Kabushiki Kaisha
- Semiconductor devices and methods of manufacturing thereof27 Aug 2026US 2026/0255894 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- CVD flowable gap fill799US 7,915,139 B1Novellus Systems, Inc. · 2011
- Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process777US 5,000,113 AAPPLIED Materials.Inc. · 1991
- Silicone polymer insulation film on semiconductor substrate and method for forming the film735US 6,383,955 B1ASM Japan K .K. · 2002
- Plasma processes for depositing low dielectric constant films671US 6,303,523 B1APPLIED Materials.Inc. · 2001
- Post treatment of low k dielectric films670US 7,018,941 B2APPLIED Materials.Inc. · 2006