Method of manufacturing integrated circuit device

A method of manufacturing an integrated circuit device, the method comprising:

• forming a first structure on a substrate such that the first structure includes a nitride film;
• forming a doped silicon oxide film on the first structure by supplying, onto the first structure, a silicon precursor, an oxidant, and at least two dopant sources including dopant elements that are different from each other such that the doped silicon oxide film includes at least two dopant elements;
• forming a plurality of vertical holes through the doped silicon oxide film and the first structure by dry-etching the doped silicon oxide film and the first structure;
• and
• respectively forming a plurality of vertical structures in the plurality of vertical holes,
• wherein the silicon precursor includes a monosilane compound including C1-C10 oxy group and a Si—H functional group, a monosilane compound including a C1-C10 organoamino group and a Si—H functional group, a disilane compound including a C1-C10 oxy group and a Si—H functional group, a siloxane compound including a C1-C10 oxy group and a Si—H functional group, or a combination thereof.

A method of manufacturing an integrated circuit device, the method comprising:

• forming a first structure, in which a plurality of silicon oxide films and a plurality of silicon nitride films are alternately stacked one by one in a vertical direction, on a substrate in a first area and a second area adjacent to each other in a horizontal direction;
• forming a doped silicon oxide film, which includes at least two dopant elements, in the second area to cover the first structure and the substrate by supplying, onto the substrate in the second area, a silicon precursor, an oxidant, and at least two dopant sources including dopant elements that are different from each other;
• forming a plurality of first vertical holes through the first structure in the first area and a plurality of second vertical holes through the doped silicon oxide film and the first structure in the second area, by simultaneously dry-etching the first structure and the doped silicon oxide film in the first area and the second area;
• and
• forming a plurality of vertical structures to respectively fill insides of the plurality of first vertical holes and the plurality of second vertical holes,
• wherein the silicon precursor includes a monosilane compound including C1-C10 oxy group and a Si—H functional group, a monosilane compound including a C1-C10 organoamino group and a Si—H functional group, a disilane compound including a C1-C10 oxy group and a Si—H functional group, a siloxane compound including a C1-C10 oxy group and a Si—H functional group, or a combination thereof.