Precursor for forming low dielectric constant silicon-containing thin film and method for forming low dielectric constant silicon-containing thin film using same

A precursor for forming a low dielectric constant silicon-containing thin film, comprising a silicon-containing compound represented the following Chemical Formula 1 or Chemical Formula 2,

• characterized in that the precursor for forming a low dielectric constant silicon-containing thin film forms a low dielectric constant silicon-containing thin film having a dielectric constant of 2.2 to 3.6:
• wherein R1 and R2 may be identical to or different from each other, and are each independently a hydrogen atom, a linear, branched, or cyclic C1-C6 alkyl group, an allyl group containing a linear, branched, or cyclic C1-C6 functional group, a vinyl group containing a linear, branched, or cyclic C1-C6 functional group, an alkoxy group containing a linear, branched, or cyclic C1-C6 functional group, a primary or secondary amine group, or a phenyl group optionally containing a C1-C6 functional group,
• R3 to R6 are ach independently a linear, branched, or cyclic C1-C6 alkyl group, an allyl group containing a linear, branched, or cyclic C1-C6 functional group, or a vinyl group containing a linear, branched, or cyclic C1-C6 functional group, n is 1 to 4, and m is 1 to 6.