H10P 14/3454
Amorphous
Official title: {Amorphous}
H10P14/3454 (Amorphous) appears on 873 US grants and 998 published applications in this corpus.
Search patents in H10P- Granted patents
- 873
- Published applications
- 998
- Assignees
- 260
- Inventors
- 1,839
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 1 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 1 | 0 |
| 1991 | 2 | 0 |
| 1992 | 0 | 0 |
| 1993 | 2 | 0 |
| 1994 | 3 | 0 |
| 1995 | 2 | 0 |
| 1996 | 2 | 0 |
| 1997 | 1 | 0 |
| 1998 | 3 | 0 |
| 1999 | 4 | 0 |
| 2000 | 6 | 0 |
| 2001 | 8 | 6 |
| 2002 | 6 | 12 |
| 2003 | 11 | 17 |
| 2004 | 15 | 11 |
| 2005 | 6 | 16 |
| 2006 | 9 | 13 |
| 2007 | 12 | 11 |
| 2008 | 10 | 12 |
| 2009 | 15 | 17 |
| 2010 | 5 | 33 |
| 2011 | 19 | 18 |
| 2012 | 15 | 24 |
| 2013 | 17 | 27 |
| 2014 | 31 | 41 |
| 2015 | 39 | 70 |
| 2016 | 65 | 83 |
| 2017 | 90 | 87 |
| 2018 | 71 | 101 |
| 2019 | 89 | 91 |
| 2020 | 77 | 100 |
| 2021 | 70 | 70 |
| 2022 | 47 | 39 |
| 2023 | 47 | 41 |
| 2024 | 23 | 26 |
| 2025 | 30 | 20 |
| 2026 | 15 | 12 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of selectively forming crystalline boron-doped silicon germanium on a surface6 Oct 2026US 12,757,647 B2ASM IP Holding B. V.
- Film forming method and film forming apparatus15 Sep 2026US 12,740,349 B2Tokyo Electron Limited
- Particle reduction in physical vapor deposition of amorphous silicon1 Sep 2026US 12,723,304 B2APPLIED Materials.Inc.
- Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium25 Aug 2026US 12,720,650 B2Kokusai Electric Corporation
- Atomic layer deposition of passivation layer28 Jul 2026US 12,696,695 B2Tokyo Electron Limited
- Method for manufacturing thin film transistor, sputtering target, and sintered body3 Sep 2026US 2026/0262239 A1Kobelco Research Institute, Inc.
- Low temperature n-type contact epi formation27 Aug 2026US 2026/0255645 A1APPLIED Materials.Inc.
- Method for manufacturing semiconductor device, method for manufacturing display device and semiconductor device30 Jul 2026US 2026/0223607 A1Magnolia White Corporation
- Method of manufacturing polycrystalline silicon layer, display device including polycrystalline silicon layer, method of manufacturing display device, and electronic device25 Jun 2026US 2026/0182024 A1Samsung Display Co., Ltd.
- Method for forming metal oxide layer14 May 2026US 2026/0136618 A1Semiconductor Energy Laboratory Co.Ltd.
Most cited
By later US patents
- Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator1,026US 7,601,984 B2Canon Kabushiki Kaisha · 2009
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- Selective inhibition in atomic layer deposition of silicon-containing films484US 9,875,891 B2Lam Research Corporation · 2018
- Selective inhibition in atomic layer deposition of silicon-containing films419US 9,564,312 B2Lam Research Corporation · 2017
- Method of forming silicon film344US 9,922,824 B2Tokyo Electron Limited · 2018