Method for manufacturing thin film transistor, sputtering target, and sintered body
AssigneeKobelco Research Institute, Inc.
InventorMototaka OCHI
Life of this patent
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Abstract
An object of the present disclosure is to provide a method for manufacturing a thin film transistor that enables enhancing operational stability. An aspect of the present disclosure is a method for manufacturing a thin film transistor on a substrate, the thin film transistor including at least: an oxide semiconductor layer; a protective layer; a gate insulating layer; a gate electrode; a source electrode; and a drain electrode, the method including: forming on the substrate, the oxide semiconductor layer containing In, Zn, and Al as metal elements; and forming on the oxide semiconductor layer, the protective layer containing SiN.
Claims12
A method for manufacturing a thin film transistor on a substrate, the thin film transistor comprising at least:
- an oxide semiconductor layer;
- a protective layer;
- a gate insulating layer;
- a gate electrode;
- a source electrode;
- and a drain electrode, the method comprising:
- forming on the substrate, the oxide semiconductor layer comprising In, Zn, and Al as metal elements;
- and
- forming on the oxide semiconductor layer, the protective layer comprising SiN.
A method for manufacturing a thin film transistor on a substrate, the thin film transistor comprising at least:
- an oxide semiconductor layer;
- an oxide gas barrier layer;
- a protective layer;
- a gate insulating layer;
- a gate electrode;
- a source electrode;
- and a drain electrode, the method comprising:
- forming the oxide semiconductor layer on the substrate;
- forming on the oxide semiconductor layer, the oxide gas barrier layer comprising In, Zn, and Al as metal elements;
- and
- forming on the oxide gas barrier layer, the protective layer comprising SiN.
A sputtering target for forming at least one of an oxide semiconductor layer and an oxide gas barrier layer to be used for a thin film transistor, the sputtering target comprising:
- In, Zn, and Al as metal elements,
- wherein
- contents of the In, the Zn, and the Al with respect to a total of all metal elements comprised are as follows:
- In:
- greater than or equal to 40 atm % and less than or equal to 75 atm %;
- Zn:
- greater than or equal to 15 atm % and less than or equal to 45 atm %;
- and
- Al:
- greater than or equal to 0.5 atm % and less than or equal to 20 atm %.
Dependencies are inferred from the claim text.