Selective inhibition in atomic layer deposition of silicon-containing films
AssigneeLam Research Corporation
InventorsJon Henri, Dennis M. Hausmann, Bart J. van Schravendijk, Shane Tang, Karl F. Leeser
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Abstract
Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. Exposure to a hydrogen-containing inhibitor may be performed with a plasma, and methods are suitable for selective inhibition in thermal or plasma enhanced atomic layer deposition of silicon-containing films.
Claims15
A method comprising:
- exposing a substrate having a feature thereon to an inhibitor such that the inhibitor is selectively adsorbed to sites at a top of the feature;
- and
- performing one or more deposition cycles to deposit material in the feature.
A method comprising:
- performing a deposition cycle comprising:
- exposing a substrate having a feature thereon to an inhibitor to form an inhibitor ambient such that the inhibitor is selectively adsorbed to sites at a top of the feature;
- exposing the substrate to a first precursor to form a first precursor ambient;
- exposing the substrate to a second reactant to form a second reactant ambient;
- and
- repeating the deposition cycle one or more times to deposit material in the feature.
Dependencies are inferred from the claim text.