Method for manufacturing semiconductor device, method for manufacturing display device and semiconductor device
AssigneeMagnolia White Corporation
InventorsMasanobu IKEDA, Masumi NISHIMURA, Satoshi ISHIDA
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Abstract
A method for manufacturing a semiconductor device includes forming a c-axis oriented aluminum nitride layer on a glass substrate, the c-axis being oriented substantially perpendicular to a surface of the glass substrate, forming an amorphous silicon layer on the c-axis oriented aluminum nitride layer, annealing the amorphous silicon layer to form crystalline polysilicon containing crystal grains whose (111) planes are oriented parallel to the surface of the c-axis oriented aluminum nitride layer, and forming a plurality of transistors including the crystalline polysilicon.
Claims19
A method for manufacturing a semiconductor device comprising:
- forming a c-axis oriented aluminum nitride layer on a glass substrate, the c-axis being oriented substantially perpendicular to a surface of the glass substrate;
- forming an amorphous silicon layer on the c-axis oriented aluminum nitride layer;
- annealing the amorphous silicon layer to form crystalline polysilicon containing crystal grains whose (111) planes are oriented parallel to the surface of the c-axis oriented aluminum nitride layer;
- and
- forming a plurality of transistors including the crystalline polysilicon.
A semiconductor device comprising:
- a glass substrate including a first surface;
- a c-axis oriented aluminum nitride layer arranged on the first surface, the c-axis being oriented substantially perpendicular to the first surface;
- crystalline polysilicon arranged on the aluminum nitride layer and including crystal grains whose (111) planes are oriented parallel to the surface of the c-axis oriented aluminum nitride layer;
- a first insulating layer arranged on the crystalline polysilicon;
- a first electrode arranged on the first insulating layer;
- a second insulating layer arranged on the first electrode;
- and
- a second electrode and a third electrode arranged on the second insulating layer and electrically connected to the crystalline polysilicon.
Dependencies are inferred from the claim text.