US 12,723,304 B2 · Particle reduction in physical vapor deposition of amorphous silicon

Abstract

Methods for depositing amorphous silicon films via physical vapor deposition processes are disclosed. In some embodiments, a method of depositing amorphous silicon in a physical vapor deposition (PVD) process chamber includes (a) depositing an amorphous silicon layer atop a surface of a substrate disposed on a substrate support via a physical vapor deposition process, in the meanwhile amorphous silicon is also deposited atop components within the PVD process chamber; and depositing a glue layer atop the amorphous silicon deposited on the components. The glue layer can be a silicon compound. The silicon compound can be a compound of silicon with one or more of carbon, nitrogen, or oxygen. In some embodiments, the silicon compound is SiC, SiN, SiO, SiCN, or SiON.

Claims14

Dependent claims

A method of depositing amorphous silicon in a physical vapor deposition (PVD) process chamber, comprising:

(a) depositing an amorphous silicon layer atop a surface of a substrate disposed on a substrate support via a physical vapor deposition process, wherein amorphous silicon is further deposited atop components within the PVD process chamber;
and
(b) depositing a glue layer atop the amorphous silicon deposited on the components, wherein the glue layer is SiC, SiO, SiCN, SiON, or a combination thereof.

Dependencies are inferred from the claim text.

Particle reduction in physical vapor deposition of amorphous silicon

Life of this patent

Particle reduction in physical vapor deposition of amorphous silicon

Life of this patent

Abstract

Claims14