Atomic layer deposition of passivation layer
AssigneeTokyo Electron Limited
InventorsDu Zhang, Koki Mukaiyama, Takatoshi Orui, Tomohiko Niizeki, Maju Tomura, Yoshihide Kihara, Mingmei Wang
Life of this patent
Estimating the term…
Abstract
A method for processing a substrate that includes: forming a passivation layer over sidewalls of a recess in a carbon-containing layer over a substrate by a cyclic passivation process including a plurality of cycles, each of the plurality of cycles including, exposing the substrate to a first gas including a refractory metal in the absence of a plasma, and after exposing to the first gas, exposing the substrate to a second gas including oxygen or nitrogen.
Claims21
A method for processing a substrate, the method comprising:
- forming a passivation layer over sidewalls of a recess in a carbon-containing layer of the substrate by a cyclic passivation process comprising a plurality of cycles, the substrate comprising the carbon-containing layer over a dielectric layer, each of the plurality of cycles comprising,
- exposing the substrate to a first gas comprising a refractory metal in the absence of a plasma, and
- after exposing to the first gas, exposing the substrate to a second gas comprising oxygen or nitrogen;
- and
- patterning the dielectric layer using the carbon-containing layer as an etch mask.
A method for processing a substrate, the method comprising:
- forming a carbon-containing layer over a dielectric layer of a substrate;
- forming an initial recess in the carbon-containing layer by exposing the substrate to a first plasma, the initial recess comprising sidewalls;
- forming a passivation layer over the sidewalls by
- exposing the substrate to a metal precursor gas comprising a halide of a refractory metal, and
- exposing the substrate to a second gas comprising oxygen or nitrogen;
- and
- extending the initial recess in the carbon-containing layer by exposing the substrate to the first plasma, the passivation layer covering the sidewalls of the carbon-containing layer during the extending.
A method for processing a substrate, the method comprising:
- forming a carbon-containing layer over a dielectric layer of a substrate;
- forming an initial recess in the carbon-containing layer by exposing the substrate to a first plasma, the initial recess comprising sidewalls;
- forming a passivation layer over the sidewalls by
- exposing the substrate to a metal precursor gas comprising a halide of a refractory metal, and
- exposing the substrate to a second gas comprising oxygen or nitrogen;
- extending the initial recess by exposing the substrate to the first plasma, the passivation layer covering the sidewalls during the extending-extending;
- repeating the forming of the passivation layer and the extending of the initial recess to expose a portion of the dielectric layer at a bottom of the extended initial recess;
- and
- after the repeating, patterning the dielectric layer by an anisotropic plasma etch process using the carbon-containing layer as an etch mask.
Dependencies are inferred from the claim text.